Devices and methods of making the same
First Claim
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1. A method for making a substantially transparent transistor, comprising:
- establishing a substantially transparent conductive layer on a substantially transparent substrate, thereby forming a gate electrode;
establishing at least one metal layer on the gate electrode;
substantially completely anodizing the at least one metal layer, thereby forming a substantially transparent gate dielectric; and
establishing a substantially transparent source, a substantially transparent drain, and a substantially transparent channel on the substantially transparent gate dielectric.
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Accused Products
Abstract
Devices including a substantially transparent dielectric and methods of forming such devices are disclosed.
77 Citations
64 Claims
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1. A method for making a substantially transparent transistor, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, thereby forming a gate electrode;
establishing at least one metal layer on the gate electrode;
substantially completely anodizing the at least one metal layer, thereby forming a substantially transparent gate dielectric; and
establishing a substantially transparent source, a substantially transparent drain, and a substantially transparent channel on the substantially transparent gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for making a device, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, to form a substantially transparent electrode;
establishing a tantalum layer on the substantially transparent electrode; and
thermally oxidizing in air the tantalum layer, thereby forming a substantially transparent dielectric. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for making a device, comprising:
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establishing at least one of a substantially transparent source, a substantially transparent drain, a substantially transparent channel and a substantially transparent capacitor electrode on a substantially transparent substrate;
establishing a tantalum layer in overlying relationship to the substrate and the at least one substantially transparent source, substantially transparent drain, substantially transparent channel and substantially transparent capacitor electrode;
establishing a substantially transparent conductive layer on the tantalum layer, thereby forming one of a substantially transparent electrode and a substantially transparent gate electrode;
thermally oxidizing in air the tantalum layer, thereby forming one of a substantially transparent dielectric and a substantially transparent gate dielectric, wherein the one of the substantially transparent dielectric and the substantially transparent gate dielectric; and
the one of the substantially transparent electrode and the substantially transparent gate electrode form one of a substantially transparent stack and a substantially transparent gate stack; and
operatively disposing the one of the substantially transparent stack and the substantially transparent gate stack in the device.
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24. A method of making a substantially transparent transistor, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, thereby forming a substantially transparent gate electrode;
establishing a tantalum layer on the substantially transparent gate electrode;
thermally oxidizing the tantalum layer, thereby forming a substantially transparent gate dielectric; and
establishing a substantially transparent source, a substantially transparent drain and a substantially transparent channel on the substantially transparent gate dielectric, thereby forming the substantially transparent transistor. - View Dependent Claims (25, 26, 27)
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28. A device, comprising:
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a substantially transparent substrate;
one of a substantially transparent stack and a substantially transparent gate stack disposed on the substantially transparent substrate; and
one of a substantially transparent capacitor electrode; and
a substantially transparent source and a substantially transparent drain disposed on the one of the substantially transparent stack and the substantially transparent gate stack;
wherein the one of the substantially transparent stack and the substantially transparent gate stack includes;
one of a substantially transparent electrode and a substantially transparent gate electrode disposed on the substantially transparent substrate, the one of the substantially transparent electrode and the substantially transparent gate electrode formed from a substantially transparent conductive material; and
one of a substantially transparent dielectric and a substantially transparent gate dielectric disposed on the one of the substantially transparent electrode and the substantially transparent gate electrode, the one of the substantially transparent dielectric and the substantially transparent gate dielectric formed from at least one substantially completely anodized metal layer. - View Dependent Claims (29, 30, 31, 32, 33)
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34. An electronic device, comprising:
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a substantially transparent substrate;
a substantially transparent gate stack disposed on the substantially transparent substrate; and
a substantially transparent source and a substantially transparent drain disposed on the substantially transparent gate stack;
wherein the substantially transparent gate stack is formed by a method, comprising;
establishing a substantially transparent conductive layer on the substantially transparent substrate, thereby forming a substantially transparent gate electrode;
establishing a tantalum layer on the substantially transparent conductive layer; and
thermally oxidizing the tantalum layer, thereby forming a substantially transparent gate dielectric. - View Dependent Claims (35, 36, 37, 38, 39)
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40. An electronic device, comprising:
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a substantially transparent substrate;
a substantially transparent source and a substantially transparent drain disposed on the substantially transparent substrate; and
a substantially transparent gate stack disposed in overlying relationship to the substantially transparent substrate and the source and drain;
wherein the substantially transparent gate stack is formed by a method, comprising;
establishing a tantalum layer in overlying relationship to the substrate and the source and drain;
establishing a substantially transparent conductive layer on the tantalum layer, thereby forming a substantially transparent gate electrode; and
thermally oxidizing in air the tantalum layer, thereby forming a substantially transparent gate dielectric, wherein the substantially transparent gate dielectric and the substantially transparent gate electrode form the substantially transparent gate stack.
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41. A thin film substantially transparent transistor, comprising:
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a substantially transparent substrate;
a substantially transparent gate electrode disposed on the substantially transparent substrate, the substantially transparent gate electrode formed from a substantially transparent conductive material;
a substantially transparent gate dielectric disposed on the substantially transparent gate electrode, the substantially transparent gate dielectric formed from at least one completely anodized metal layer; and
a substantially transparent source and a substantially transparent drain disposed on the substantially transparent gate dielectric. - View Dependent Claims (42, 43, 44, 45, 46)
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47. A method for making a substantially transparent electronic device, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, thereby forming one of a substantially transparent electrode and a substantially transparent gate electrode;
establishing at least one metal layer on the one of the substantially transparent electrode and the substantially transparent gate electrode;
forming one of a substantially transparent dielectric and a substantially transparent gate dielectric from the at least one metal layer by one of substantially complete anodization and thermal oxidation; and
establishing at least one of a substantially transparent capacitor electrode, a substantially transparent source, a substantially transparent drain and a substantially transparent channel on the one of the substantially transparent dielectric and the substantially transparent gate dielectric, thereby forming the substantially transparent electronic device. - View Dependent Claims (48, 49)
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50. A method for making a substantially transparent electronic device, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, thereby forming one of a substantially transparent electrode and a substantially transparent gate electrode;
step for forming one of a substantially transparent dielectric and a substantially transparent gate dielectric on the one of the substantially transparent electrode and the substantially transparent gate electrode; and
establishing at least one of a substantially transparent capacitor electrode, a substantially transparent source, a substantially transparent drain and a substantially transparent channel on the one of the substantially transparent dielectric and the substantially transparent gate dielectric, thereby forming the substantially transparent electronic device.
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51. A method of using a substantially transparent gate stack, comprising:
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establishing a substantially transparent source and a substantially transparent drain on the substantially transparent gate stack, the substantially transparent gate stack including a substantially transparent substrate, a substantially transparent gate electrode disposed on the substantially transparent substrate, and a substantially transparent gate dielectric disposed on the substantially transparent gate electrode, the substantially transparent gate dielectric formed from one of substantially complete anodization of a metal layer and thermal oxidation of a metal layer; and
operatively disposing the substantially transparent gate stack having the source and drain disposed thereon in an electronic device.
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52. A method for making a device, comprising:
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establishing a substantially transparent conductive layer on a substantially transparent substrate, to form a substantially transparent electrode;
establishing a metal layer on the substantially transparent electrode; and
substantially completely anodizing the metal layer, thereby forming a substantially transparent dielectric. - View Dependent Claims (53, 54, 55, 56)
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57. A device, comprising:
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a substantially transparent substrate;
a substantially transparent electrode on the substantially transparent substrate; and
a substantially transparent dielectric formed of a substantially completely anodized metal layer on the substantially transparent electrode. - View Dependent Claims (58, 59, 60)
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61. A device, comprising:
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a substantially transparent substrate;
a substantially transparent electrode on the substantially transparent substrate; and
a substantially transparent dielectric formed of thermally oxidized tantalum on the substantially transparent electrode. - View Dependent Claims (62, 63, 64)
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Specification