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Void free, silicon filled trenches in semiconductors

  • US 20060003523A1
  • Filed: 07/01/2004
  • Published: 01/05/2006
  • Est. Priority Date: 07/01/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a trench having sidewalls in a semiconductor substrate;

    depositing a layer of a-Si or polysilicon in the trench; and

    annealing the a-Si or polysilicon layer in a hydrogen atmosphere to collapse any voids in the trench.

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