Void free, silicon filled trenches in semiconductors
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- forming a trench having sidewalls in a semiconductor substrate;
depositing a layer of a-Si or polysilicon in the trench; and
annealing the a-Si or polysilicon layer in a hydrogen atmosphere to collapse any voids in the trench.
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Abstract
The present invention provides methods of producing substantially void-free trench structures. After deposition of an a-Si or polysilicon layer in a trench formed in a semiconductor, the a-Si or polysilicon is exposed to hydrogen at an elevated temperature.
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Citations
21 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a trench having sidewalls in a semiconductor substrate;
depositing a layer of a-Si or polysilicon in the trench; and
annealing the a-Si or polysilicon layer in a hydrogen atmosphere to collapse any voids in the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of fabricating a semiconductor device, comprising:
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forming a trench having sidewalls in a semiconductor substrate;
depositing a layer of a-Si or polysilicon in the trench; and
flowing hydrogen in the trench at an elevated temperature in a manner to avoid recrystallization of a-Si or polysilicon in the sidewalls. - View Dependent Claims (16, 17, 18, 19)
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20. A method of forming an electrode comprising:
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forming an outer electrode in a semiconductor substrate;
depositing a layer of a-Si or polysilicon in a trench formed in the semiconductor substrate to form an inner electrode;
exposing the a-Si or polysilicon to flowing hydrogen for less than about 5 minutes at a temperature elevated above the temperature at which the a-Si or polysilicon layer was deposited. - View Dependent Claims (21)
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Specification