Semiconductor device and method of manufacturing therefor

• US 20060003532A1
• Filed: 09/09/2005
• Published: 01/05/2006
• Est. Priority Date: 07/11/2001
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Inoue, Masao
• Application Number:
  US11/221,823
• Publication Number:
  US 20060003532A1
• Time in Patent Office: Days
• US Class Current: 438/296
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence

Abstract

An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of: a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.

Claims

1. A method of manufacturing a semiconductor device comprising:

a step of forming a trench at a main surface of a semiconductor substrate;

a step of forming an oxidation preventive film along an inner wall of said trench;

a step of forming a filling layer so as to fill said trench; and

a step of applying an high oxidation capability on said main surface of a semiconductor substrate in an atmosphere in which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated to thereby form a gate oxide film on said main surface of a semiconductor substrate.

2-8. -8. (canceled)