Device and a process for the calibration of a semiconductor component test system, in particular of a probe card and/or of a semiconductor component test apparatus

• US 20060005089A1
• Filed: 06/28/2005
• Published: 01/05/2006
• Est. Priority Date: 06/29/2004
• Status: Active Grant

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Infineon Technologies AG
• Inventors: Bucksch, Thorsten
• Granted Patent: US 7,375,508 B2
• Time in Patent Office: Days
• US Class Current: 714/724
• CPC Class Codes: G01R 1/07342 the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
• CPC Class Codes: G01R 31/3191 Calibration
• CPC Class Codes: G01R 35/005 Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references G01R33/0035, G01R35/002 take precedence
• CPC Class Codes: G11C 2029/5602 Interface to device under test
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/56 External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Abstract

A device and a process for the calibration of a semi-conductor component test system The invention relates to a process and a device for the calibration of a probe card and/or of a semi-conductor component test apparatus, including a first connection, at which a corresponding signal, in particular a calibration signal can be applied, and a second connection, connected or connectable with the first connection, at which the signal, in particular the calibration signal, can be emitted, and a third connection, at which a corresponding further signal, in particular a calibration signal, can be applied, and a fourth connection, connected or connectable with the third connection, at which the further signal, in particular the calibration signal, can be emitted.

Claims

1. A device for calibration of a probe card and/or of a semi-conductor component test apparatus, comprising:

a first connection, at which a calibration signal can be applied;

a second connection, configured for connection with the first connection, at which the calibration signal, can be emitted;

a third connection, at which a further calibration signal, can be applied; and

a fourth connection, configured for connection with the third connection, at which the further calibration signal can be emitted.

2. The device according to claim 1, which is configured such that, in a first setting of a probe card, a first contact of the probe card, configured for connection with a reference driver channel contacts the first connection, and a second contact of the probe card, configured for connection with a first comparator channel, contacts the second connections.

3. The device according to claim 2, which is configured such that, in a second setting of the probe card, the first contact of the probe card, configured for connection with the reference driver channel, contacts the third connection, and a third contact of the probe card, configured for connection with a second comparator channel contacts the fourth connection.

4. The device according to claim 1, which is configured such that, in a first setting of the probe card, a first contact of the probe card, configured for connection with a first driver channel, contacts the first connection, and a second contact of the probe card, configured for connection with a reference comparator channel contacts the second connection.

5. The device according to claim 4, which is configured such that, in a second setting of the probe card, a third contact of the probe card, configured for connection with a second driver channel contacts the third connection, and the second contact of the probe card, configured for connection with the reference comparator channel contacts the fourth connection.

6. The device according to claim 1, wherein the device is a wafer.

7. The device according to claim 6, in which the first connection and the second connection, and/or the third connection and the fourth connection are connected via one or several structures created on or in the wafer.

8. A system, comprising:

a device for calibration of a probe card and/or of a semi-conductor component test apparatus, comprising;

a first connection, at which a calibration signal can be applied,

a second connection, configured for connection with the first connection at which the calibration signal, can be emitted,

a third connection, at which a further calibration signal, can be applied, and

a fourth connection, configured for connection with the third connection, at which the further calibration signal can be emitted, wherein the device is a wafer and in which the first connection and the second connection, and/or the third connection and the fourth connection are connected via one or several structures created on or in the wafer; and

a probe card.

9. A system according to claim 8, further comprising a semi-conductor component test apparatus connectable to the probe card.

10. A process for the calibration of a probe card and/or of a semi-conductor component test apparatus, comprising:

emitting a calibration signal to a driver channel of a semi-conductor component test apparatus;

feedback of the calibration signal to the semi-conductor component test apparatus via a probe card connected with the driver channel, a device connected thereto, and a comparator channel of the semi-conductor component test apparatus connected with the probe card.

11. The process according to claim 10, further comprising changing the signal delay time generated by a delay device connected with the comparator channel such that the signal propagation time of the calibration signal, passing through the driver channel and the comparator channel corresponds with a predetermined value.

12. The process according to claim 10, further comprising:

emitting a further calibration signal to the driver channel of the semi-conductor component test apparatus;

feedback of the further calibration signal to the semi-conductor component test apparatus via the probe card connected with the driver channel, the device connected thereto, and a further comparator channel of the semi-conductor component test apparatus connected with the probe card.

13. The process according to claim 12, further comprising changing the signal delay time generated by a delay device connected with the further comparator channel such that the signal propagation time of the further calibration signal, passing through the driver channel and the further comparator channel corresponds with the predetermined value.

14. The process according to claim 10, further comprising changing the signal delay time generated by a delay device connected with the driver channel such that the signal propagation time of the calibration signal passing through the driver channel and the comparator channel corresponds with a predetermined value.

15. The process according to claim 14, further comprising:

emitting a further calibration signal to a further driver channel of the semi-conductor component test apparatus;

feedback of the further calibration signal to the semi-conductor component test apparatus via the probe card connected to the further driver channel, the device connected thereto and the comparator channel of the semi-conductor component test apparatus connected to the probe card.

16. The process according to claim 15, further comprising changing the signal delay time generated by a delay device connected with the further driver channel such that the signal propagation time of the further calibration signal passing through the further driver channel and the comparator channel corresponds with the predetermined value.