Substrate supporting structure for semiconductor processing, and plasma processing device

• US 20060005930A1
• Filed: 09/09/2005
• Published: 01/12/2006
• Est. Priority Date: 03/12/2003
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Yamamoto, Kaoru, Tanaka, Sumi, Ikeda, Taro
• Granted Patent: US 7,837,828 B2
• Time in Patent Office: Days
• US Class Current: 156/345.510
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32431 Constructional details of the reactor
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

A substrate supporting structure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the mounting table (51), and flow channels (505, 506) feeding or discharging the heat exchange medium fluid to or from the temperature control spaces (507) are formed in the transmission path (502).

Claims

1. A substrate supporting structure for semiconductor processing comprising:

a mounting table for mounting thereon a substrate to be processed; and

a support part, disposed to be downwardly extended below the mounting table, for supporting the mounting table,

wherein the mounting table includes an electrode part;

a first insulating layer for covering a periphery of the electrode part;

a second insulating layer for covering a bottom surface of the electrode part; and

a first conducting layer covering the first and second insulating layers,

wherein the support part includes a conductive transmission path for supplying a power to the electrode part;

a third insulating layer for covering a periphery of the transmission path; and

a second conducting layer for covering a periphery of the third insulating layer, and

wherein the electrode part of the mounting table, the first and the second insulating layers and the first conducting layer are coaxially configured;

the conductive transmission path of the support part, the third insulating layer and the second conducting layer are coaxially configured;

the electrode part and the conductive transmission path are integrally formed; and

the first and the second conducting layers are electrically connected to each other, and

wherein a first channel for supplying a heat exchange medium into the electrode part is formed; and

a second channel communicated with the first channel is formed in the conductive transmission path.

2. The substrate supporting structure of claim 1, further comprising a gas flow passage, formed in the transmission path, for supplying a heat transfer gas between the mounting table and the substrate.

3. The substrate supporting structure of claim 1, wherein, in the mounting table and the support part, a first sealing member is disposed between the electrode part and the second insulating layer and a second sealing member is disposed between the second insulating layer and the first conductive layer in order to airtightly separate a mounting table side and a support part side.

4. The substrate supporting structure of claim 1, wherein the second channel is formed in a thermally insulating tube installed in the conductive transmission path.

5. The substrate supporting structure of claim 1, wherein each of the first and the second insulating layer is made of a material selected from a group of low dielectric materials including quartz and a resin.

6. The substrate supporting structure of claim 1, wherein the third insulating layer is made of a material selected from a group of low dielectric materials including a resin.

7. The substrate supporting structure of claim 1, wherein the power supplied to the electrode part is a high frequency power.

8. The substrate supporting structure of claim 1, further comprising an electrostatic chuck, disposed on the mounting table, for electrostatically adsorbing the substrate to the mounting table.

9. The substrate supporting structure of claim 8, wherein the electrostatic chuck is configured such that an electrode layer is embedded between an upper and a lower insulating layer;

and the electrode layer and the insulating layers of the electrostatic chuck are integrally formed to have an uneven surface structure such that a groove is formed on a surface of the electrostatic chuck; and

a gas flow passage, formed in the transmission path for supplying a heat transfer gas between the mounting table and the substrate, is connected to the groove.

10. The substrate supporting structure of claim 8, further comprising a wiring, disposed in the transmission path while being electrically isolated, for applying a DC voltage to the electrostatic chuck.

11. The substrate supporting structure of claim 10, wherein the wiring has an enlarged diameter head portion of a substantially cone shape at a part in contact with the electrostatic chuck, the head portion having a bottom portion of a relatively larger diameter and a top portion which reduces in diameter towards an electrode layer of the electrostatic chuck, and being coated with a thermal spraying insulating film.

12. The substrate supporting structure of claim 11, wherein the head portion is of an overlapped shape of plural sub-portions having different diameters.

13. A plasma processing device, comprising:

an airtight processing chamber for accommodating therein a substrate to be processed;

a gas supply unit for supplying a processing gas into the processing chamber;

a gas pumping unit for exhausting the processing chamber;

a mounting table, disposed in the processing chamber, for mounting thereon the substrate; and

a support part, disposed to be downwardly extended below the mounting table, for supporting the mounting table,

wherein the mounting table includes an electrode part;

a first insulating layer for covering a periphery of the electrode part;

a second insulating layer for covering a bottom surface of the electrode part; and

a first conducting layer covering the first and second insulating layers,

wherein the support part includes a conductive transmission path for supplying a power to the electrode part;

a third insulating layer for covering a periphery of the transmission path; and

a second conducting layer for covering a periphery of the third insulating layer, and

wherein the electrode part of the mounting table, the first and the second insulating layers and the first conducting layer are coaxially configured;

the conductive transmission path of the support part, the third insulating layer and the second conducting layer are coaxially configured;

the electrode part and the conductive transmission path are integrally formed; and

the first and the second conducting layers are electrically connected to each other, and

wherein a first channel for supplying a heat exchange medium into the electrode part is formed, and a second channel communicated with the first channel is formed in the conductive transmission path.

14. The plasma processing device of claim 13, wherein an exhaust chamber having sufficiently small outline compared to the processing chamber is connected to the support part to surround same below the processing chamber, and

wherein the exhaust chamber exhausts the processing chamber through a space between the exhaust chamber and the support part.

15. The plasma processing device of claim 13, wherein the second conducting layer is grounded.

16. The plasma processing device of claim 13, wherein the second channel is connected to a circulation unit for circulating the heat exchanged medium.

17. The plasma processing device of claim 13, further comprising a gas flow passage, formed in the transmission path, for supplying a heat transfer gas between the mounting table and the substrate.

18. The plasma processing device of claim 13, wherein the power supplied to the electrode part is a high frequency power.

19. The plasma processing device of claim 13, further comprising an electrostatic chuck, disposed on the mounting table, for electrostatically adsorbing the substrate to the mounting table.

20. The plasma processing device of claim 19, further comprising a wiring, disposed in the transmission path while being electrically isolated, for applying a DC voltage to the electrostatic chuck.

21. A plasma processing device, comprising:

an airtight processing chamber for accommodating therein a substrate to be processed;

a gas supply unit for supplying a processing gas into the processing chamber;

a gas pumping unit for exhausting the processing chamber;

a mounting table, disposed in the processing chamber, for mounting thereon the substrate; and

a conductive extension member for surrounding the substrate mounted on the mounting table, the extension member having a surface in parallel with that of the substrate,

wherein the mounting table includes an electrode part to which a power is applied;

a pedestal insulation layer for covering a bottom surface and a side of the electrode part; and

a pedestal conduction layer, electrically connected to the support conduction layer, for covering at least a part of the bottom surface and the side of the pedestal insulation layer; and

the electrode part, the pedestal insulation layer and the pedestal conduction layer are coaxially configured, and

wherein the extension member is disposed on the pedestal insulation layer while being electrically insulated from the electrode part and the pedestal conduction layer;

in the side of the pedestal insulation layer, a top end of the pedestal conduction layer is disposed to be placed below a bottom portion of the electrode part; and

impedance between the extension member and the pedestal conduction layer is set to be greater than impedance between the electrode part and the pedestal conduction layer.

22. The plasma processing device of claim 21, wherein the processing chamber includes a conductive lower vessel for accommodating therein the mounting table and an insulating upper vessel, disposed above the lower vessel, for forming a plasma generation space above the mounting table;

and an inductive coil for generating an induced electromagnetic field in the plasma generation space is disposed to surround the upper vessel.

23. The plasma processing device of claim 21, wherein the power supplied to the electrode part is a high frequency power.

24. The plasma processing device of claim 21, further comprising a support part for supporting the mounting table,

wherein the support part includes a conductive transmission path for introducing the power into the mounting table;

a support insulation layer for covering the transmission path; and

a support conduction layer, electrically connected to the pedestal conduction layer and grounded, for covering the support insulation layer, the transmission path, the support insulation layer and the support conduction layer being coaxially configured.

25. The plasma processing device of claim 24, wherein the transmission path is formed integrally with the electrode part.