Device and method for the production of chlorotriflouride and system for etching semiconductor substrates using said device
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Accused Products
Abstract
A device (6) and a method for generating chlorine trifluoride is described, a high-density plasma (105) being generated in the interior of a plasma reactor (100) using plasma generating means (110, 120, 130, 150, 155, 160, 170, 180), and a first gas and a second gas, which react with one another under the influence of the high-density plasma (105) in the plasma reactor (100) under the formation of chlorine trifluoride, being supplied to the plasma reactor (100) via gas supply means (21, 22, 25, 26). In addition, a gas outlet (20) is provided, via which the generated chlorine trifluoride can be removed from the plasma reactor (100). Finally, a system (5) for etching semiconductor substrates (30), silicon wafers in particular, is described including such an upstream device (6), the system (5) having a process chamber (10) which is connected to the plasma reactor (100) via the gas outlet (20), and the semiconductor substrate (30) being situated in the process chamber (10) and exposed to the gaseous chlorine trifluoride generated by the device (6).
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Citations
26 Claims
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1-13. -13. (canceled)
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14. A device for generating chlorine trifluoride comprising:
- a plasma reactor (100), plasma generating means (110, 120, 130, 150, 155, 160, 170, 180) via which a high-density plasma (105) can be generated in the interior of the plasma reactor (100), gas supply means (21, 25, 22, 26) via which a first gas and a second gas can be supplied to the plasma reactor (100), these gases reacting with one another under the influence of the high-density plasma (105) in the plasma reactor (100), forming chlorine trifluoride, and a gas outlet (20) via which the formed chlorine trifluoride can be removed from the plasma reactor (100).
- View Dependent Claims (15, 16, 17, 18, 19)
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20. A method for generating chlorine trifluoride, comprising:
- generating a high-density plasma (105) in a plasma reactor (100), and supplying to the plasma reactor (100) a first gas and a second gas, which react with one another under the influence of the high-density plasma (105) in the plasma reactor (100), forming chlorine trifluoride.
- View Dependent Claims (21, 22, 23, 24, 25, 26)
Specification