Nitride-based compound semiconductor light emitting device and fabricating method thereof
First Claim
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1. A nitride-based compound semiconductor light emitting device, comprising:
- a support substrate;
a first ohmic electrode formed on the support substrate;
a bonding metal layer formed on the first ohmic electrode;
a second ohmic electrode formed on the bonding metal layer;
a nitride-based compound semiconductor layer formed on the second ohmic electrode;
a transparent electrode formed on an approximately entire upper surface of the semiconductor layer; and
an ohmic electrode formed on a back side of said support substrate.
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Abstract
The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a transparent electrode stacked in this order on a support substrate, and further includes an ohmic electrode formed on a back side of the support substrate.
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Citations
15 Claims
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1. A nitride-based compound semiconductor light emitting device, comprising:
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a support substrate;
a first ohmic electrode formed on the support substrate;
a bonding metal layer formed on the first ohmic electrode;
a second ohmic electrode formed on the bonding metal layer;
a nitride-based compound semiconductor layer formed on the second ohmic electrode;
a transparent electrode formed on an approximately entire upper surface of the semiconductor layer; and
an ohmic electrode formed on a back side of said support substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A fabricating method of a nitride-based compound semiconductor light emitting device, comprising the steps of:
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forming a nitride-based compound semiconductor layer on a substrate;
forming a second ohmic electrode on the nitride-based compound semiconductor layer;
forming a second bonding metal layer on the second ohmic electrode;
forming a first ohmic electrode on a support substrate;
forming a first bonding metal layer on the first ohmic electrode;
bonding said first bonding metal layer and said second bonding metal layer;
removing said substrate to expose a surface of said nitride-based compound semiconductor layer; and
forming a transparent electrode on the exposed surface. - View Dependent Claims (13, 14, 15)
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Specification