×

Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same

  • US 20060006447A1
  • Filed: 07/12/2005
  • Published: 01/12/2006
  • Est. Priority Date: 07/12/2004
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device including an MIM capacitor, comprising:

  • a plate electrode disposed on a substrate;

    a mold layer covering the substrate and having an opening that exposes the plate electrode;

    a sidewall electrode disposed on an inner sidewall of the opening like a spacer, electrically connecting the plate electrode; and

    a dielectric pattern and an upper electrode that sequentially cover the plate electrode and the sidewall electrode in the opening, wherein the plate electrode and the sidewall electrode compose a lower electrode.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×