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Electrically alterable memory cell

  • US 20060006454A1
  • Filed: 05/02/2005
  • Published: 01/12/2006
  • Est. Priority Date: 07/01/2004
  • Status: Active Grant
First Claim
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1. A nonvolatile memory cell, comprising:

  • a body of a semiconductor material having a first conductivity type;

    a first and a second spaced-apart regions formed in the body and having a second conductivity type, with a channel region of the body defined therebetween;

    a charge storage layer disposed over and insulated from the channel region;

    a ballistic gate disposed over and insulated from the charge storage layer; and

    a tunneling gate disposed over and insulated from the ballistic gate by a charge filter, wherein the charge filter permits transporting of charge carriers of one polarity type from the tunneling gate through the ballistic gate to the charge storage layer and blocks transporting of charge carriers of an opposite polarity type from the ballistic gate to the tunneling gate.

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