III-nitride materials including low dislocation densities and methods associated with the same
First Claim
1. A semiconductor structure comprising:
- a III-nitride material region having a screw dislocation density of less than about 108/cm2 throughout the III-nitride material region.
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Accused Products
Abstract
Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
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Citations
76 Claims
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1. A semiconductor structure comprising:
a III-nitride material region having a screw dislocation density of less than about 108/cm2 throughout the III-nitride material region. - View Dependent Claims (2, 6, 7, 8, 10, 11, 13, 14, 16, 17, 18, 19, 20, 22, 23)
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3-5. -5. (canceled)
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9. (canceled)
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12. (canceled)
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15. (canceled)
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21. (canceled)
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24. (canceled)
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25. A semiconductor structure comprising:
a III-nitride material region including an area having dimensions of at least about 100 microns×
100 microns and a screw dislocation density of less than about 104/cm2.- View Dependent Claims (27, 28, 33, 47)
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26. (canceled)
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29-32. -32. (canceled)
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34-36. -36. (canceled)
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37. A semiconductor structure comprising:
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a semiconductor region having a top surface; and
a III-nitride material region formed over the top surface and having a different composition than the semiconductor region, wherein a cross-sectional area of the III-nitride material region within 100 nanometers of the top surface has a screw dislocation density of less than about 108/cm2. - View Dependent Claims (38, 39, 40, 46)
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41-45. -45. (canceled)
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48. A semiconductor structure comprising:
a III-nitride material region having a screw dislocation density of less than about 108/cm2 and an edge dislocation density of greater than about 108/cm2. - View Dependent Claims (49, 50)
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51-52. -52. (canceled)
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54. A semiconductor structure comprising:
a III-nitride material region having an edge dislocation density and a screw dislocation density, the edge dislocation density being at least 100 times greater than the screw dislocation density. - View Dependent Claims (55)
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57-60. -60. (canceled)
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61. A semiconductor structure comprising:
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a substrate;
a silicon nitride-based material layer having a thickness of less than 100 Angstroms and substantially covering an entire top surface of the substrate; and
a III-nitride material region formed over the silicon nitride-based material layer and having a screw dislocation density of less than about 108/cm2.
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62. A method of forming a semiconductor structure comprising:
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providing a substrate; and
forming a gallium nitride material region over the substrate having a screw dislocation density of less than about 108/cm2 throughout the III-nitride material region. - View Dependent Claims (63, 68, 69, 71, 73, 74)
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64-67. -67. (canceled)
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70. (canceled)
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72. (canceled)
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75. A method of forming a semiconductor structure comprising:
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providing a semiconductor material region having a top surface; and
vertically growing a III-nitride material region over the semiconductor material region, the III-nitride material region having a composition different than the semiconductor material region, wherein a screw dislocation density in a cross-sectional area of the III-nitride material region located within 100 nanometers of the top surface of the semiconductor material region is less than about 108/cm2.
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76-78. -78. (canceled)
Specification