LIGHT EMITTING DIODE HAVING AN ADHESIVE LAYER FORMED WITH HEAT PATHS

• US 20060006524A1
• Filed: 06/29/2005
• Published: 01/12/2006
• Est. Priority Date: 07/07/2004
• Status: Abandoned Application

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun
• Application Number:
  US11/160,589
• Publication Number:
  US 20060006524A1
• Time in Patent Office: Days
• US Class Current: 257/706
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

The present invention is related to a light emitting diode having an adhesive layer provided with heat paths. In the present invention, an adhesive layer is formed to bond the substrate and the LED stack. There are a plurality of metal protrusions or semiconductor protrusions passing through the adhesive layer to form heat-dissipation paths to improve the heat-dissipation effect of the LED so as to enhance the stability and the light-emitting efficiency of the LED.

Claims

1. An light-emitting diode having an adhesive layer formed with at leat one heat path comprising:

a high heat-dissipation substrate;

an electrical insulation layer;

an LED stack formed on the electrical insulation layer; and

an adhesive layer between the high heat-dissipation substrate and the electrical insulation layer, wherein the adhesive layer is formed with at least one heat path protrusion that passes through or penetrate the adhesive layer.

2. The light-emitting diode according to claim 1, further comprising an electrical insulation layer formed between the high heat-dissipation substrate and the adhesive layer, or an electrical insulation layer simultaneously formed between the high heat-dissipation substrate and the adhesive layer and formed between the adhesive layer and the LED stack.

3. The light-emitting diode according to claim 2, wherein the electrical insulation layer is made of a material selected from the group consisting of SiNx, SiO2, Al2O3, TiO2, and the like.

4. The light-emitting diode according to claim 1, wherein the electrical insulation layer is made of a material by selected from the group consisting of SiNx, SiO2, Al2O3, TiO2, and the like.

5. The light-emitting diode according to claim 1 further comprising:

a transparent conductive layer formed between the electrical insulation layer and the LED stack.

6. The light-emitting diode according to 5, wherein the transparent conductive layer is made of a material selected from the group consisting of tin indium oxide, tin cadmium oxide, tin antimony oxide, zinc oxide, and tin zinc oxide.

7. The light-emitting diode according to claim 1 further comprising:

a transparent layer formed on the LED stack.

8. The light-emitting diode according to claim 7, wherein the transparent conductive layer is made of a material selecting from the group consisting of tin indium oxide, tin cadmium oxide, tin antimony oxide, zinc oxide, and tin zinc oxide.

9. The light-emitting diode according to claim 1 further comprising:

a reflective layer formed between the adhesive layer and the electrical insulation layer.

10. The light-emitting diode according to claim 9, wherein the reflective layer is made of a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

11. The light-emitting diode according to claim 1, wherein the protrusion heat path is capable of being a metal protrusion path or a semiconductor heat path, and wherein the heat path is made of a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si, SiC, and the like.

12. The light-emitting diode according to claim 1, wherein the adhesive layer is made of a material selected from the group consisting of Pi, BCB, PFCB, and the like.

13. The light-emitting diode according to claim 1, wherein the high heat-dissipation substrate is made of a material by selected from the group consisting of GaP, Si, SiC, and the like.

14. The light-emitting diode according to claim 1, wherein the LED stack comprises:

a first contactive layer;

a first cladding layer formed on the first contactive layer;

a light-emitting layer formed on the first cladding layer;

a second cladding layer formed on the light-emitting layer; and

a second contact layer formed on the second cladding layer.

15. The light-emitting diode according to claim 14, wherein the first contact layer is made of a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.

16. The light-emitting diode according to claim 14, wherein the first cladding layer is made of a material selected from the group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN.

17. The light-emitting diode according to claim 14, wherein the light-emitting layer is made of a material selected from the group consisting of AlGaInP, InGaP, GaN, AlGaN, InGaN, and AlGaInN.

18. The light-emitting diode according to claim 14, wherein the second cladding layer is made of a material selected from the group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN.

19. The light-emitting diode according to claim 14, wherein the second contact layer is made of a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.

20. An LED array providing with an adhesive layer having a heat path comprising:

a high heat-dissipation substrate;

an electrical insulation layer;

a plurality of LED stacks formed on the electrical insulation layer, wherein said LED stacks on the electrical insulation layer are electrically contacting to form an LED array; and

an adhesive layer between the high heat-dissipation substrate and the electrical insulation layer, wherein the adhesive layer has a heat path protrusion so as to use the protrusion to pass through or partially pass through the adhesive layer.

21. The LED array according to claim 20 further comprising:

an electrical insulation layer formed between the high heat-dissipation substrate and the adhesive layer, or an electrical insulation layer simultaneously formed between the high heat-dissipation substrate and the adhesive layer and formed between the adhesive layer and said LED stacks.

22. The LED array according to claim 21, wherein the electrical insulation layer is made of a material selected from the group consisting of SiNx, SiO2, Al2O3, TiO2, and the like.

23. The LED array according to claim 20, wherein the electrical insulation layer is made of a material selected from the group consisting of SiNx, SiO2, Al2O3, TiO2, and the like.

24. The LED array according to claim 20 further comprising a transparent conductive layer formed between the electrical insulation layer and the LED stack.

25. The LED array according to claim 20 further comprising a transparent layer formed on the LED stack.

26. The LED array according to claim 20 further comprising a reflective layer formed between the adhesive layer and the electrical insulation layer.

27. The LED array according to claim 20, wherein the protrusion heat path is capable of being a metal protrusion path or a semiconductor heat path, and wherein the heat path is made of a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSn, AuZn, GaP, Si, SiC, and the like.

28. The LED array according to claim 20, wherein the adhesive layer is made of a material selected from the group consisting of Pi, BCB, PFCB, and the like.

29. The LED array according to claim 20, wherein the high heat-dissipation substrate is made of a material selected from the group consisting of GaP, Si, SiC, the like.

30. The LED array according to claim 20, wherein the LED stack comprises:

a first contactive layer;

a first cladding layer formed on the first contactive layer;

a light-emitting layer formed on the first cladding layer;

a second cladding layer formed on the light-emitting layer; and

a second contact layer formed on the second cladding layer.

31. The LED array according to claim 30, wherein the first contact layer is made of a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.

32. The LED array according to claim 30, wherein the first cladding layer is made of a material selected from the group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN.

33. The LED array according to claim 30, wherein the light-emitting layer is made of a material selected from the group consisting of AlGaInP, InGaP, GaN, AlGaN, InGaN, and AlGaInN.

34. The LED array according to claim 30, wherein the second cladding layer is made of a material selected from the group consisting of AlGaInP, AlInP, AlN, GaN, AlGaN, InGaN, and AlGaInN.

35. The LED array according to claim 30, wherein the second contact layer is made of a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGaInP, AlGaAs, GaN, InGaN, and AlGaN.