Semiconductor device and semiconductor module employing thereof

• US 20060006539A1
• Filed: 06/28/2005
• Published: 01/12/2006
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: Adeia Semiconductor Advanced Technologies Inc. (f/k/a Tessera Advanced Technologies, Inc.) (Adeia Inc.)
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Kawano, Masaya, Matsui, Satoshi
• Granted Patent: US 7,768,133 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05551 comprising apertures or cavities
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/14181 On opposite sides of the body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices

Abstract

A semiconductor device 100 is provided with a silicon substrate 101 and a structure 120 filled in a through hole that has a rectangular cross section and extends through the silicon substrate 101. The structure 120 comprises a pipe-shaped through electrode 103, stripe-shaped through electrodes 107, silicons 105, a first insulating film 109, a second insulating film 111 and a third insulating film 113. The pipe-shaped through electrode 103 is utilized as a pipe-shaped electric conductor that extends through the silicon substrate 101. In addition, the stripe-shaped through electrodes 107 are provided in the interior of the pipe-shaped through electrode 103 so that the stripe-shaped through electrodes 107 extend through the silicon substrate 101 and is spaced away from the pipe-shaped through electrode 103. A plurality of through electrodes 107 are provided in substantially parallel within the inner region of the pipe-shaped through electrode 103.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

a first pipe-shaped electric conductor extending through said semiconductor substrate; and

a plurality of second electric conductors, extending through said semiconductor substrate and being provided in the interior of said first electric conductor spaced away from said first electric conductor.

2. The semiconductor device according to claim 1, wherein said plurality of said second electric conductors are provided to be mutually substantially parallel.

5. The semiconductor device according to claim 1, further comprising:

a first insulating film covering an outer side face of said first electric conductor, a second insulating film covering an inner side face of said first electric conductor and a third insulating film covering a side face of said second electric conductors.

6. The semiconductor device according to claim 5, wherein said second insulating film and said third insulating film are separated by a semiconductor region.

7. The semiconductor device according to claim 6, wherein said semiconductor region that separates said second insulating film and said third insulating film comprises a loop portion and a connecting portion that connects different two parts of said loop portion.

8. The semiconductor device according to claim 6, wherein said semiconductor region is a silicon region.

9. The semiconductor device according to claim 1, wherein said first electric conductor and said second electric conductors are coupled so as to be in an equipotential.

11. The semiconductor device according to claim 1, wherein said plurality of said second electric conductors are coupled so as to be in an equipotential.

16. A semiconductor module, comprising a multilayered structure that includes the semiconductor device according to claim 1 and other type of semiconductor device,

wherein said first electric conductor or said second electric conductors is electrically coupled to said other type of semiconductor device.

3. A semiconductor device, comprising:

a semiconductor substrate;

a first pipe-shaped electric conductor extending through said semiconductor substrate; and

a second electric conductor, extending through said semiconductor substrate and coupling a region of the interior face of said first electric conductor to other region of the interior face of said first electric conductor.

4. The semiconductor device according to claim 3, wherein said plurality of second electric conductors are provided to be mutually substantially parallel.

10. The semiconductor device according to claim 3, wherein said first electric conductor and said second electric conductors are coupled so as to be in an equipotential.

12. The semiconductor device according to claim 3, further comprising a first insulating film covering an outer side face of said first electric conductor and a second insulating film covering an inner side face of said first electric conductor and a side face of said second electric conductors.

13. The semiconductor device according to claim 12, further comprising:

a semiconductor region separated from said first electric conductor and said first electric conductor by said second insulating film.

14. The semiconductor device according to claim 13, wherein said semiconductor region is a silicon region.

15. The semiconductor device according to claim 4, wherein said plurality of second electric conductors include a first group of second electric conductors provided to be are mutually substantially parallel along with a first direction and a second group of second electric conductors provided to be are mutually substantially parallel along with a second direction which is perpendicular to said first direction.

17. A semiconductor module, comprising a multilayered structure that includes the semiconductor device according to claim 3 and other type of semiconductor device,

wherein said first electric conductor or said second electric conductors is electrically coupled to said other type of semiconductor device.