Vertical structure semiconductor devices with improved light output
First Claim
1. A method of fabricating light emitting semiconductor devices, comprising the steps of:
- forming a light emitting layer; and
forming an undulated surface over the light emitting layer to improve light output beam profile.
1 Assignment
0 Petitions
Accused Products
Abstract
The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.
97 Citations
31 Claims
-
1. A method of fabricating light emitting semiconductor devices, comprising the steps of:
-
forming a light emitting layer; and
forming an undulated surface over the light emitting layer to improve light output beam profile. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 31)
-
-
11. A method of fabricating light emitting semiconductor devices, comprising the steps of:
-
forming a light emitting layer; and
forming a macro-lens over the surface of each of the semiconductor devices to improve light output beam profile. - View Dependent Claims (12, 13)
-
-
14. A method of fabricating light emitting semiconductor devices, comprising the steps of:
-
forming a light emitting layer;
forming a contact pad over the semiconductor structure to contact with the light emitting layer; and
packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame, wherein contact with the semiconductor device is maintained between the upper lead frame and lower lead frame. - View Dependent Claims (15)
-
-
16. A light emitting semiconductor device, comprising:
-
a light emitting layer; and
an undulated surface over the light emitting layer to improve light output beam profile. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25)
-
-
26. A light emitting semiconductor device, comprising:
-
a light emitting layer; and
a macro-lens over the surface of the semiconductor device to improve light output beam profile. - View Dependent Claims (27, 28)
-
-
29. A light emitting semiconductor device, comprising:
-
a light emitting layer;
a contact pad over the semiconductor structure to contact with the light emitting layer; and
a package including an upper lead frame and lower lead frame, wherein contact with the semiconductor device is maintained between the upper lead frame and lower lead frame. - View Dependent Claims (30)
-
Specification