Solid-state image pickup device, and manufacturing method thereof
First Claim
1. A solid-state imaging apparatus that includes an imaging region and a drive circuit region both formed on one semiconductor substrate, the imaging region including an active-type unit pixel in which a photodiode unit generates signal charge by photoelectric conversion and an amplification unit amplifies the signal charge, the drive circuit region being for driving the photodiode unit and the amplification unit, the imaging region and the drive circuit region including one or more transistors respectively, wherein the transistors in the imaging region and the drive circuit region have a same channel polarity.
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Abstract
The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same.
A MOS type imaging apparatus 1 includes an imaging region 10 and a driving region 20 both formed on a p-type silicon substrate (hereinafter called an “Si substrate”) 31.
The imaging region 10 includes six pixels 11 to 16 disposed in a shape of a matrix having 2 rows and 3 columns. The driving region 20 includes a timing generation circuit 21, a vertical shift resistor 22, a horizontal shift resistor 23, a pixel selection circuit 24, and so on.
All transistors included in the pixels 11 to 16 in the imaging region and the circuits 21 to 24 in the driving circuit region 20 are of n-channel MOS type.
54 Citations
14 Claims
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1. A solid-state imaging apparatus that includes an imaging region and a drive circuit region both formed on one semiconductor substrate, the imaging region including an active-type unit pixel in which a photodiode unit generates signal charge by photoelectric conversion and an amplification unit amplifies the signal charge, the drive circuit region being for driving the photodiode unit and the amplification unit, the imaging region and the drive circuit region including one or more transistors respectively, wherein
the transistors in the imaging region and the drive circuit region have a same channel polarity.
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10. A manufacturing method for a solid-state imaging apparatus, comprising steps of:
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forming, on a semiconductor substrate, an imaging region including a photodiode unit for converting input light into signal charge and an amplification unit for amplifying the signal charge; and
forming, on the semiconductor substrate, a drive circuit region for driving the imaging region, wherein MOS type transistors having a same channel polarity are formed in both steps for forming the imaging region and the drive circuit region respectively. - View Dependent Claims (11, 12, 13, 14)
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Specification