Non-volatile memory device
First Claim
1. A semiconductor device comprising:
- a substrate region;
a source region formed in the substrate region;
a drain region formed in the substrate region and separated from the source region by a channel region;
a first gate overlaying a first portion of the channel and separated therefrom via a first insulating layer;
a second gate overlaying a second portion of the channel and separated therefrom via a second insulating layer;
wherein said first portion of the channel and said second portion of the channel do not overlap, wherein the first portion of the channel has an implant doping concentration that is greater than the implant doping concentration of a remainder portion of the channel region, wherein the remainder portion of the channel region has an implant doping concentration that is greater than the substrate doping concentration.
1 Assignment
0 Petitions
Accused Products
Abstract
A non-volatile memory device includes a guiding gate that extends along a first portion of the device'"'"'s channel length and a control gate that extends along a second portion of the device'"'"'s channel length. The first and second portions of the channel length do not overlap. The guiding gate, which overlays the substrate above the channel region, is insulated from the semiconductor substrate in which the device is formed via an oxide layer. The channel region under the guiding gate has a doping concentration greater than the doping concentration of the substrate. The remaining portion of the channel region has a doping concentration greater than the doping concentration of the substrate but less than the doping concentration of the channel region under the guiding gate. The control gate, which also overlays the substrate above the channel region, is insulated from the substrate via an oxide-nitride-oxide layer.
65 Citations
17 Claims
-
1. A semiconductor device comprising:
-
a substrate region;
a source region formed in the substrate region;
a drain region formed in the substrate region and separated from the source region by a channel region;
a first gate overlaying a first portion of the channel and separated therefrom via a first insulating layer;
a second gate overlaying a second portion of the channel and separated therefrom via a second insulating layer;
wherein said first portion of the channel and said second portion of the channel do not overlap, wherein the first portion of the channel has an implant doping concentration that is greater than the implant doping concentration of a remainder portion of the channel region, wherein the remainder portion of the channel region has an implant doping concentration that is greater than the substrate doping concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification