Method of fabricating a poly-crystalline silicon thin film and method of fabricating a semiconductor device using the same

• US 20060009014A1
• Filed: 07/06/2005
• Published: 01/12/2006
• Est. Priority Date: 07/08/2004
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Hans S., Noguchi, Takashi, Kim, Do-young, Kwon, Jung-yeon
• Application Number:
  US11/174,649
• Publication Number:
  US 20060009014A1
• Time in Patent Office: Days
• US Class Current: 438/486
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters

Abstract

A method of fabricating a poly-crystalline silicon thin film, and a method of fabricating a semiconductor device using the same, includes implanting predominantly neutralized ions into an amorphous silicon thin film formed on a substrate. The thin film may be annealed. Glass, silicon and other substrates, such as heat intolerant substrates, e.g., plastic, may be employed. Eximer laser annealing using relatively high energy densities may be employed. Thin film transistors and numerous other semiconductor devices may be formed using the poly-crystalline silicon thin film.

Claims

1. A method of fabricating a poly-crystalline silicon thin film, the method comprising:

forming an amorphous silicon thin film on a substrate;

implanting a material into the amorphous silicon thin film using ion implantation, wherein the material is predominantly neutralized ions; and

annealing the amorphous silicon thin film, after implanting the material, to form the poly-crystalline silicon thin film.

2. The method as claimed in claim 1, wherein the substrate is a substrate selected from the group consisting of a silicon substrate, a glass substrate, and a plastic substrate.

3. The method as claimed in claim 1, wherein forming the amorphous silicon thin film on the substrate includes physical vapor deposition.

4. The method as claimed in claim 3, wherein the physical vapor deposition includes sputtering using argon or xenon.

5. The method as claimed in claim 1, wherein the neutralized ions are ions of one selected from the group consisting of silicon, germanium, argon, and carbon.

6. The method as claimed in claim 5, wherein the neutralized ions are ions of silicon.

7. The method as claimed in claim 1, wherein the annealing includes eximer laser annealing.

8. The method as claimed in claim 7, wherein the eximer laser annealing includes irradiation at an energy density of greater than about 200 mJ/cm².

9. A method of fabricating a semiconductor device, comprising:

providing a substrate;

forming an amorphous silicon layer on the substrate;

using ion implantation to implant predominantly neutralized ions into the amorphous silicon layer;

annealing the amorphous silicon layer, after implanting the neutralized ions, to form a poly-crystalline layer; and

implanting a dopant into the poly-crystalline layer, after annealing the amorphous silicon layer, to form a source region and a drain region.

10. The method as claimed in claim 9, further comprising annealing the source and drain regions after implanting the dopant into the poly-crystalline layer.

11. The method as claimed in claim 9, wherein the substrate is a substrate selected from the group consisting of a silicon substrate, a glass substrate, and a plastic substrate.

12. The method as claimed in claim 9, wherein forming the amorphous silicon layer on the substrate includes physical vapor deposition using sputtering.

13. The method as claimed in claim 9, wherein the neutralized ions are ions of one selected from the group consisting of silicon, germanium, argon, and carbon.

14. The method as claimed in claim 9, wherein the annealing includes eximer laser annealing.

15. A method of fabricating a thin film transistor, comprising:

providing a substrate;

forming an amorphous silicon thin film on the substrate;

using ion implantation to implant predominantly neutralized ions into the amorphous silicon thin film;

performing a first annealing to anneal the amorphous silicon thin film to form a poly-crystalline silicon thin film;

forming two active regions in the poly-crystalline silicon thin film by implanting a dopant, the two active regions having a channel region disposed between them; and

forming a gate on the channel region.

16. The method as claimed in claim 15, wherein forming the two active regions further includes performing a second annealing after implanting the dopant.

17. The method as claimed in claim 15, wherein the substrate is a substrate selected from the group consisting of a silicon substrate, a glass substrate, and a plastic substrate.

18. The method as claimed in claim 15, wherein the amorphous silicon thin film is formed using sputtering.

19. The method as claimed in claim 15, wherein the neutralized ions are ions of one selected from the group consisting of silicon, germanium, argon, and carbon.

20. The method as claimed in claim 15, wherein the first annealing includes eximer laser annealing.