Method of fabricating a poly-crystalline silicon thin film and method of fabricating a semiconductor device using the same
First Claim
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1. A method of fabricating a poly-crystalline silicon thin film, the method comprising:
- forming an amorphous silicon thin film on a substrate;
implanting a material into the amorphous silicon thin film using ion implantation, wherein the material is predominantly neutralized ions; and
annealing the amorphous silicon thin film, after implanting the material, to form the poly-crystalline silicon thin film.
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Abstract
A method of fabricating a poly-crystalline silicon thin film, and a method of fabricating a semiconductor device using the same, includes implanting predominantly neutralized ions into an amorphous silicon thin film formed on a substrate. The thin film may be annealed. Glass, silicon and other substrates, such as heat intolerant substrates, e.g., plastic, may be employed. Eximer laser annealing using relatively high energy densities may be employed. Thin film transistors and numerous other semiconductor devices may be formed using the poly-crystalline silicon thin film.
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20 Claims
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1. A method of fabricating a poly-crystalline silicon thin film, the method comprising:
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forming an amorphous silicon thin film on a substrate;
implanting a material into the amorphous silicon thin film using ion implantation, wherein the material is predominantly neutralized ions; and
annealing the amorphous silicon thin film, after implanting the material, to form the poly-crystalline silicon thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a semiconductor device, comprising:
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providing a substrate;
forming an amorphous silicon layer on the substrate;
using ion implantation to implant predominantly neutralized ions into the amorphous silicon layer;
annealing the amorphous silicon layer, after implanting the neutralized ions, to form a poly-crystalline layer; and
implanting a dopant into the poly-crystalline layer, after annealing the amorphous silicon layer, to form a source region and a drain region. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of fabricating a thin film transistor, comprising:
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providing a substrate;
forming an amorphous silicon thin film on the substrate;
using ion implantation to implant predominantly neutralized ions into the amorphous silicon thin film;
performing a first annealing to anneal the amorphous silicon thin film to form a poly-crystalline silicon thin film;
forming two active regions in the poly-crystalline silicon thin film by implanting a dopant, the two active regions having a channel region disposed between them; and
forming a gate on the channel region. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification