Materials and gas chemistries for processing systems
First Claim
1. A method for controlling processing uniformity while processing a substrate using a plasma-enhanced process, comprising:
- providing a plasma processing chamber having a single chamber, substantially azimuthally symmetric configuration within which a plasma is both ignited and sustained during said processing of said substrate, said plasma processing chamber having no separate plasma generation chamber;
providing a coupling window disposed at an upper end of said plasma processing chamber;
providing an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
providing an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field at different radial locations above said substrate within said plasma processing chamber in the region proximate to said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect uniformity across said substrate density of said plasma in said region proximate to said coupling window and antenna;
providing a dc power supply coupled to said electromagnet arrangement;
placing said substrate into said plasma processing chamber;
flowing reactant gases into said plasma processing chamber, said reactant gases include a combination of gases, wherein two or more gases of said combination of gases included in said reactant gases is a Cx Fy Hz Ow gas;
striking said plasma out of said reactant gases; and
changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate to said antenna to control said density of said plasma when said reactant gases are being flown in said plasma processing and thereby improving processing uniformity across said substrate chamber;
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Abstract
A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.
102 Citations
23 Claims
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1. A method for controlling processing uniformity while processing a substrate using a plasma-enhanced process, comprising:
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providing a plasma processing chamber having a single chamber, substantially azimuthally symmetric configuration within which a plasma is both ignited and sustained during said processing of said substrate, said plasma processing chamber having no separate plasma generation chamber;
providing a coupling window disposed at an upper end of said plasma processing chamber;
providing an RF antenna arrangement disposed above a plane defined by said substrate when said substrate is disposed within said plasma processing chamber for said processing;
providing an electromagnet arrangement disposed above said plane defined by said substrate, said electromagnet arrangement being configured so as to result in a radial variation in the controlled magnetic field at different radial locations above said substrate within said plasma processing chamber in the region proximate to said coupling window and antenna when at least one direct current is supplied to said electromagnet arrangement, said radial variation being effective to affect uniformity across said substrate density of said plasma in said region proximate to said coupling window and antenna;
providing a dc power supply coupled to said electromagnet arrangement;
placing said substrate into said plasma processing chamber;
flowing reactant gases into said plasma processing chamber, said reactant gases include a combination of gases, wherein two or more gases of said combination of gases included in said reactant gases is a Cx Fy Hz Ow gas;
striking said plasma out of said reactant gases; and
changing said radial variation in said controlled magnetic field within said plasma processing chamber in said region proximate to said antenna to control said density of said plasma when said reactant gases are being flown in said plasma processing and thereby improving processing uniformity across said substrate chamber;
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification