Radiation-emitting semiconductor element and method for producing the same

• US 20060011925A1
• Filed: 02/25/2005
• Published: 01/19/2006
• Est. Priority Date: 04/26/2000
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Eisert, Dominik, Lugauer, Hans-Jurgen, Mundbrod-Vangerow, Manfred, Harle, Volker, Bader, Stefan
• Application Number:
  US11/065,769
• Publication Number:
  US 20060011925A1
• Time in Patent Office: Days
• US Class Current: 257/78
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).

The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Claims

1. Radiation-emitting semiconductor component whose comprising a semiconductor body including a stack of different III-V nitride semiconductor layers configured to emit radiation, wherein the semiconductor body has a first principal surface and a second principal surface, with at least a portion of the radiation produced being emitted through the first principal surface, and wherein a reflector is applied to the second principal surface.

2. Radiation-emitting semiconductor component pursuant to claim 1, wherein the semiconductor layers comprise GaN, AlN, InN, AlGaN, InGaN, InAlN, or AlInGaN.

3. Radiation-emitting semiconductor component pursuant to claim 1 wherein the reflector comprises a reflecting metallic contact surface.

4. Radiation-emitting semiconductor component pursuant to claim 3, wherein the contact surface comprises Ag, Al, or an Ag or Al alloy.

5. Radiation-emitting semiconductor component pursuant to claim 1, wherein the reflector comprises a plurality of dielectric layers.

6. Radiation-emitting semiconductor component pursuant to claim 1, wherein the reflector (6) has comprises a transparent first layer applied to the second principal surface and a second reflecting layer applied to transparent first layer.

7. Radiation-emitting semiconductor component pursuant to claim 1, wherein the entire free surface of the semiconductor body or a subregion thereof is roughened.

8-39. -39. (canceled)