×

Control of strain in device layers by selective relaxation

  • US 20060011984A1
  • Filed: 09/15/2005
  • Published: 01/19/2006
  • Est. Priority Date: 06/07/2002
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a structure, the method comprising:

  • forming a strained semiconductor layer over a first substrate;

    masking a strained portion of the strained semiconductor layer; and

    selectively relaxing at least a portion of the strain in at least a portion of the strained semiconductor layer to define a relaxed portion of the strained semiconductor layer, wherein the masked strained portion of the strained semiconductor layer remains strained.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×