Local sense amplifier in memory device

• US 20060013051A1
• Filed: 07/12/2005
• Published: 01/19/2006
• Est. Priority Date: 07/13/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Sang-Bo
• Granted Patent: US 7,236,414 B2
• Time in Patent Office: Days
• US Class Current: 365/205
• CPC Class Codes: G11C 7/062 Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
• CPC Class Codes: G11C 7/18 Bit line organisation; Bit line lay-out

Abstract

A memory device includes a decoder that sets an operational control signal and a column select line signal at a first logical level simultaneously. In addition, a local sense amplifier has at least one switching device that is turned on by the operational control signal that is at the first logical level to couple at least one local I/O line to at least one global I/O line. Furthermore, signal lines, that are disposed to be parallel, transmit the operational control signal and the column select line signal from the decoder.

Claims

1. A local sense amplifier comprising:

at least one switching device that is turned on by an operational control signal that is at a first logical level to couple at least one local I/O line to at least one global I/O line;

wherein the operational control signal is at the first logical level simultaneously with a column select line signal; and

signal lines that are disposed to be parallel and that transmit the operational control signal and the column select line signal.

2. The local sense amplifier of claim 1, wherein the at least one switching device includes:

a pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple read data between a pair of local I/O lines and a pair of global I/O lines for a read operation.

3. The local sense amplifier of claim 2, wherein the local sense amplifier further includes:

a read select transistor that is turned on when a read block select signal is at the first logical level as the operation control signal is at the first logical level for the read operation.

4. The local sense amplifier of claim 2, wherein the at least one switching device includes:

another pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple write data between a pair of local I/O lines and a pair of global I/O lines for a write operation.

5. The local sense amplifier of claim 4, wherein the local sense amplifier further includes:

write select transistors that are turned on when a write block select signal is at the first logical level as the operation control signal is at the first logical level for the write operation.

6. The local sense amplifier of claim 1, wherein the at least one switching device includes:

a pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple write data between a pair of local I/O lines and a pair of global I/O lines for a write operation.

7. The local sense amplifier of claim 6, wherein the local sense amplifier further includes:

write select transistors that are turned on when a write block select signal is at the first logical level as the operation control signal is at the first logical level for the write operation.

8. The local sense amplifier of claim 1, wherein the local sense amplifier further includes:

at least one precharge switching device that is turned on when the operation control signal is at a second logical level for precharging the at least one local I/O line.

9. A memory device comprising:

a decoder that sets an operational control signal and a column select line signal at a first logical level simultaneously;

a local sense amplifier including at least one switching device that is turned on by the operational control signal that is at the first logical level to couple at least one local I/O line to at least one global I/O line; and

signal lines that are disposed to be parallel and that transmit the operational control signal and the column select line signal from the decoder.

10. The memory device of claim 9, further comprising:

a bit line sense amplifier that couples a respective at least one bit line to the at least one local I/O line when the column select line signal is at the first logical level.

11. The memory device of claim 9, wherein the at least one switching device includes:

a pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple read data between a pair of local I/O lines and a pair of global I/O lines for a read operation.

12. The memory device of claim 11, wherein the local sense amplifier further includes:

a read select transistor that is turned on when a read block select signal is at the first logical level as the operation control signal is at the first logical level for the read operation.

13. The memory device of claim 11, wherein the at least one switching device includes:

another pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple write data between a pair of local I/O lines and a pair of global I/O lines for a write operation.

14. The memory device of claim 13, wherein the local sense amplifier further includes:

write select transistors that are turned on when a write block select signal is at the first logical level as the operation control signal is at the first logical level for the write operation.

15. The memory device of claim 9, wherein the at least one switching device includes:

a pair of enable transistors that are turned on when the operational control signal is at the first logical level to couple write data between a pair of local I/O lines and a pair of global I/O lines for a write operation.

16. The memory device of claim 15, wherein the local sense amplifier further includes:

write select transistors that are turned on when a write block select signal is at the first logical level as the operation control signal is at the first logical level for the write operation.

17. The memory device of claim 9, wherein the local sense amplifier further includes:

at least one precharge switching device that is turned on when the operation control signal is at a second logical level for precharging the at least one local I/O line.

18. A memory device comprising:

a decoder that sets an operational control signal and a column select line signal at a first logical level simultaneously;

signal lines that are disposed to be parallel and that transmit the operational control signal and the column select line signal from the decoder; and

means for coupling at least one local I/O line to at least one global I/O line when the operational control signal is at the first logical level for a read/write operation.

19. The memory device of claim 18, further comprising:

a bit line sense amplifier that couples a respective at least one bit line to the at least one local I/O line when the column select line signal is at the first logical level.

20. The memory device of claim 18, wherein the local sense amplifier further includes:

means for precharging the at least one local I/O line when the operation control signal is at a second logical level.