Floating-body DRAM in tri-gate technology
First Claim
1. A partially depleted silicon-on-insulator transistor, comprising:
- a silicon body formed on an insulating film, wherein said silicon body has a top surface, a first laterally opposite sidewall, and a second laterally opposite sidewall;
a gate dielectric formed on and around said silicon body;
a gate electrode formed on said gate dielectric on and around said silicon body; and
a pair of source/drain regions formed in said silicon body on opposite sides of said gate electrode, wherein said gate electrode has a gate length less than or equal to half of a width between laterally opposite sidewalls of said silicon body, and when said transistor is turned “
ON”
said silicon body between said source/drain regions is partially depleted to create a storage node.
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Abstract
A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.
242 Citations
30 Claims
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1. A partially depleted silicon-on-insulator transistor, comprising:
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a silicon body formed on an insulating film, wherein said silicon body has a top surface, a first laterally opposite sidewall, and a second laterally opposite sidewall;
a gate dielectric formed on and around said silicon body;
a gate electrode formed on said gate dielectric on and around said silicon body; and
a pair of source/drain regions formed in said silicon body on opposite sides of said gate electrode, wherein said gate electrode has a gate length less than or equal to half of a width between laterally opposite sidewalls of said silicon body, and when said transistor is turned “
ON”
said silicon body between said source/drain regions is partially depleted to create a storage node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a partially-depleting, silicon-on-insulator transistor, comprising:
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patterning a silicon film formed on an insulating substrate into a silicon body having a top surface opposite a bottom surface formed on said insulating film, and a first and second laterally opposite sidewalls;
forming a gate dielectric layer on said top surface of said silicon body and on said sidewalls of said silicon body;
depositing a gate material over said silicon body and over said insulating substrate;
patterning said gate material to form a gate electrode on said gate dielectric layer on said top surface of said silicon body and adjacent to said gate dielectric on said sidewalls of said silicon body, said gate electrode having laterally opposite sidewalls which run perpendicular to the laterally opposite sidewalls of said silicon body; and
forming a pair of source/drain regions in said silicon body on opposite sides of said laterally opposite sidewalls of said gate electrode, wherein said gate electrode has a gate length less than or equal to half of a width between laterally opposite sidewalls of said silicon body. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A floating-body, dynamic random access memory (FBDRAM) device, comprising:
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a silicon body formed on an insulating film, wherein said silicon body has a top surface, a first laterally opposite sidewall, and a second laterally opposite sidewall;
a gate dielectric formed on and around said silicon body;
a gate electrode formed on said gate dielectric on and around said silicon body;
a pair of source/drain regions formed in said silicon body on opposite sides of said gate electrode; and
a storage node in a central region of said silicon body between said pair of source/drain regions, wherein said storage node is partially depleted to store a logic state. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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Specification