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Method of forming a layer and forming a capacitor of a semiconductor device having the same layer

  • US 20060014384A1
  • Filed: 05/27/2005
  • Published: 01/19/2006
  • Est. Priority Date: 06/05/2002
  • Status: Abandoned Application
First Claim
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1. A method of forming a layer comprising:

  • forming a preliminary layer on a substrate by an atomic layer deposition (ALD) process; and

    removing impurities from the preliminary layer using a plasma for removing impurities, the plasma being formed from a gas.

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