Semiconductor device and manufacturing method therefor

• US 20060014465A1
• Filed: 09/20/2005
• Published: 01/19/2006
• Est. Priority Date: 08/04/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 7,854,640 B2
• Time in Patent Office: Days
• US Class Current: 445/24
• CPC Class Codes: H05B 33/24 of metallic reflective layers H05B33/26 takes precedence
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A light weight and a low cost EL display device is provided, in which light emitting elements are formed on a flexible film. A thin metallic substrate is used as an element forming substrate with the present invention, edge portions of the metallic substrate are bent, and the metallic substrate is attached with good adhesion, within a vacuum, to a substrate holder which possesses curvature in its edge portions. After then forming light emitting elements on the thin metallic substrate, the substrate holder is separated.

Claims

1-21. -21. (canceled)

22. A method of manufacturing a light emitting device comprising:

bending edge portions of a substrate having a metallic surface;

fixing the substrate to a substrate holder;

forming an insulating film over the substrate having the metallic surface;

forming a light emitting element over the insulating film; and

separating the substrate from the substrate holder.

23. A method according to claim 22,

wherein the fixing step is performed within a vacuum.

24. A method according to claim 22,

wherein the fixing step is performed at a temperature in a range of room temperature to 400°

.

25. A method according to claim 22,

wherein edge portions of the substrate holder have a curvature.

26. A method according to claim 22,

wherein the substrate holder has a same thermal expansion coefficient as the substrate having the metallic surface.

27. A method according to claim 22,

wherein the substrate having the metallic surface is a heat resistive metallic substrate.

28. A method according to claim 27,

wherein a thickness of the heat resistant metallic substrate is in a range of 5 to 30 μ

m.

29. A method according to claim 22,

wherein the substrate holder comprises one selected from the group consisting of stainless steel, ceramic and Al₂O₃.

30. A method according to claim 22,

wherein the substrate holder has a thickness in a range of 500 μ

m to 1000 μ

m.

31. A method of manufacturing a light emitting device comprising:

bending edge portions of a substrate having a metallic surface;

fixing the substrate to a substrate holder by a fixing portion;

forming an insulating film over the substrate having the metallic surface;

forming a light emitting element over the insulating film; and

separating the substrate from the substrate holder by removing the fixing portion.

32. A method according to claim 31,

wherein the fixing step is performed within a vacuum.

33. A method according to claim 31,

wherein the fixing step is performed at a temperature in a range of room temperature to 400°

.

34. A method according to claim 31,

wherein edge portions of the substrate holder have a curvature.

35. A method according to claim 31,

wherein the substrate holder has a same thermal expansion coefficient as the substrate having the metallic surface.

36. A method according to claim 31,

wherein the substrate having the metallic surface is a heat resistive metallic substrate.

37. A method according to claim 36,

wherein a thickness of the heat resistant metallic substrate is in a range of 5 to 30 μ

m.

38. A method according to claim 31,

wherein the substrate holder comprises one selected from the group consisting of stainless steel, ceramic and Al₂O₃.

39. A method according to claim 31,

wherein the substrate holder has a thickness in a range of 500 μ

m to 1000 μ

m.

40. A method of manufacturing a light emitting device comprising:

bending edge portions of a metallic substrate;

fixing the metallic substrate to a substrate holder by a fixing portion;

forming an insulating film over the metallic substrate;

forming a light emitting element over the insulating film;

attaching a fixing substrate to the metallic substrate over which the light emitting element is formed; and

removing the fixing portion by cutting edge portions of the substrate holder and the edge portions of the metallic substrate.

41. A method according to claim 40,

wherein the fixing step is performed within a vacuum.

42. A method according to claim 40,

wherein the fixing step is performed at a temperature in a range of room temperature to 400°

.

43. A method according to claim 40,

wherein the edge portions of the substrate holder have a curvature.

44. A method according to claim 40,

wherein the substrate holder has a same thermal expansion coefficient as the metallic substrate.

45. A method according to claim 40,

wherein the metallic substrate is a heat resistive metallic substrate.

46. A method according to claim 45,

wherein a thickness of the heat resistant metallic substrate is in a range of 5 to 30 μ

m.

47. A method according to claim 40,

wherein the substrate holder comprises one selected from the group consisting of stainless steel, ceramic and Al₂O₃.

48. A method according to claim 40,

wherein the substrate holder has a thickness in a range of 500 μ

m to 1000 μ

m.

49. A method according to claim 40,

wherein the fixing substrate is a resin substrate having transparency or a substrate having a diamond-like carbon film on the surface.