Process for titanium nitride removal

• US 20060016783A1
• Filed: 07/22/2004
• Published: 01/26/2006
• Est. Priority Date: 07/22/2004
• Status: Abandoned Application

• Current Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Ji, Bing, Karwacki, Eugene Joseph Jr., Wu, Dingjun
• Application Number:
  US10/896,588
• Publication Number:
  US 20060016783A1
• Time in Patent Office: Days
• US Class Current: 216/58
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/32136 using plasmas

Abstract

A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance; enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location; providing the substrate at a substrate temperature greater than 50° C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.

Claims

1. A process of removing titanium nitride from a surface of a substrate, said process comprising:

providing a process gas comprising at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance;

enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location;

providing the substrate at a substrate temperature greater than 50°

C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and

contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.

2. The process of claim 1, wherein the substrate is a processing chamber, a tool part, a machine part or a workpiece.

3. The process of claim 1, wherein the substrate is substantially unharmed by removal of the titanium nitride.

4. The process of claim 1, wherein the first location is a plasma generator, the enriching comprises generating plasma from the process gas, and the second location is a reactor in fluid communication with the plasma generator.

5. The process of claim 4, wherein the plasma is generated at a plasma pressure of 0.5 to 50 Torr.

6. The process of claim 4, wherein the plasma generator has a plasma power ranging from 100 to 10,000 Watts.

7. The process of claim 1, wherein the substrate temperature is greater than 90°

C.

8. The process of claim 1, wherein the at least one reactant is at least one member selected from the group consisting of NF₃, NClF₂, NCl₂F, F₂, ClF₃, ClF, SF₆, BrF₃, BF₃, a perfluorocarbon, a hydrofluorocarbon, and an oxyfluorocarbon.

9. The process of claim 8, wherein the process gas further comprises a carrier gas selected from the group consisting of N₂, He, Ne, Kr, Xe and Ar.

10. The process of claim 9, wherein the process gas comprises 0.1 to 100% of the at least one reactant and 99.9 to 0% of the carrier gas.

11. The process of claim 1, wherein the titanium nitride is removed from the surface at an etch rate greater than 180 nm/min.

12. The process of claim 1, wherein the titanium nitride is removed from the surface at an etch rate greater than 240 nm/min.

13. The process of claim 1, wherein some or all of the titanium nitride is removed from the substrate without ion bombardment of the substrate.

14. The-process of claim 1, wherein the at least one reactant comprises NF₃ gas.

15. The process of claim 1, wherein the at least one reactive species comprises a fluorine radical.

19. An apparatus for performing the process of claim 1, said apparatus comprising:

a cleaning process reactor separate from a process reactor;

a remote plasma generator;

a gas distributor adapted to provide a flow of gas throughout the cleaning process reactor;

a heating device; and

a pumping system adapted to remove reactive gases and volatile products from the cleaning process reactor.

16. A process of removing titanium nitride from a surface of a substrate, said process comprising:

providing a process gas comprising at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance;

enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas;

providing the substrate at a substrate temperature from 50°

C. to 900°

C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and

contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate at an etch rate greater than 180 nm/min, wherein the enriched process gas contacting the titanium nitride is substantially free of ions.

17. The process of claim 16, wherein the enriching comprises generating plasma from the process gas, and the enriched process gas contacting the titanium nitride is not plasma.

18. A process of removing a coating from a surface of a substrate, said process comprising:

providing a process gas comprising at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance;

enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location;

providing the substrate at a substrate temperature from 50°

C. to 900°

C.; and

contacting the coating on the surface of the substrate with the enriched process gas to volatilize and remove the coating from the surface of the substrate at an etch rate greater than 180 nm/min, wherein the contacting occurs at a second location differing from the first location, and the coating on the surface of the substrate comprises a binary compound of titanium and nitrogen.