Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
First Claim
1. A semiconductor device using an electrically conductive substrate that has a metal connection between the substrate and a semiconductor layer grown on it, comprising an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate, an electrically conductive semiconductor layer formed on the buffer layer, and a metal connection formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.
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Abstract
A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.
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Citations
11 Claims
- 1. A semiconductor device using an electrically conductive substrate that has a metal connection between the substrate and a semiconductor layer grown on it, comprising an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate, an electrically conductive semiconductor layer formed on the buffer layer, and a metal connection formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.
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