Magnetic random access memory having magnetoresistive element

• US 20060017082A1
• Filed: 12/09/2004
• Published: 01/26/2006
• Est. Priority Date: 07/22/2004
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzumi, Yoshiaki, Kai, Tadashi
• Granted Patent: US 7,084,447 B2
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer, the recording layer comprising a first ferromagnetic layer formed on the intermediate nonmagnetic layer, a first nonmagnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a second nonmagnetic layer formed on the second ferromagnetic layer, and a third ferromagnetic layer formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling, wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.

Claims

1. A magnetic random access memory including a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer arranged between the recording layer and the fixed layer,

the recording layer comprising

a first ferromagnetic layer which is formed on the intermediate nonmagnetic layer,

a first nonmagnetic layer which is formed on the first ferromagnetic layer,

a second ferromagnetic layer which is formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer via the first nonmagnetic layer by first magnetic coupling,

a second nonmagnetic layer which is formed on the second ferromagnetic layer, and

a third ferromagnetic layer which is formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer via the second nonmagnetic layer by second magnetic coupling,

wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.

2. The memory according to claim 1, wherein an absolute value of a magnitude of magnetic interaction in the ferromagnetic coupling is smaller than an absolute value of a magnitude of magnetic interaction in the anti-ferromagnetic coupling.

3. The memory according to claim 1, wherein the first nonmagnetic layer and the second nonmagnetic layer are formed from different materials.

4. The memory according to claim 1, wherein the second nonmagnetic layer when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and

the first nonmagnetic layer when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling are essentially formed of one of Cu, Ag, Au, Pt, Pd, Ta, Os, and Re or an alloy containing at least one of the materials.

5. The memory according to claim 1, wherein

the first nonmagnetic layer when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and

the second nonmagnetic layer when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling are essentially formed of one of Ru, Ir, and Rh or an alloy containing at least one of the materials.

6. The memory according to claim 1, wherein a thickness of the first nonmagnetic layer is different from a thickness of the second nonmagnetic layer.

7. The memory according to claim 1, wherein

when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, a thickness of the second nonmagnetic layer is larger than a thickness of the first nonmagnetic layer, and

when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling, the thickness of the first nonmagnetic layer is larger than the thickness of the second nonmagnetic layer.

8. The memory according to claim 1, wherein when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, a thickness of the first ferromagnetic layer substantially equals a total thickness of the second and third ferromagnetic layers.

9. The memory according to claim 1, wherein when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling, a total thickness of the first and second ferromagnetic layers substantially equals a thickness of the third ferromagnetic layer.

10. The memory according to claim 1, wherein when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, the recording layer has a first portion having a first width and a second portion having a second width smaller than the first width, the first portion including the first ferromagnetic layer and the second ferromagnetic layer, and the second portion including the third ferromagnetic layer.

11. The memory according to claim 10, wherein the fixed layer has a third width larger than the first width.

12. The memory according to claim 1, wherein when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling, the recording layer has a first portion having a first width and a second portion having a second width smaller than the first width, the first portion including the first ferromagnetic layer, and the second portion including the second ferromagnetic layer and the third ferromagnetic layer.

13. The memory according to claim 12, wherein the fixed layer has a third width larger than the first width.

14. The memory according to claim 1, which further comprises a first write wiring line and a second write wiring line, which are arranged to sandwich the magnetoresistive element, and

in which an axis of easy magnetization of the magnetoresistive element tilts by 30°

to 60°

with respect to a direction in which one of the first write wiring line and the second write wiring line runs.

15. The memory according to claim 1, wherein the recording layer further comprises

a third nonmagnetic layer which is formed on the third ferromagnetic layer, and

a fourth ferromagnetic layer which is formed on the third nonmagnetic layer and magnetically coupled with the third ferromagnetic layer via the third nonmagnetic layer by third magnetic coupling, and

the third magnetic coupling is the same magnetic coupling state as the first magnetic coupling.

16. The memory according to claim 1, wherein the intermediate nonmagnetic layer is a tunnel insulating layer.

17. The memory according to claim 1, wherein before data is written in the magnetoresistive element, data of the magnetoresistive element is read out.

18. The memory according to claim 1, further comprising a first write wiring line and a second write wiring line, which sandwich the magnetoresistive element, and

in which in writing data in the magnetoresistive element, the first and second write wiring lines are sequentially turned on, and one of the first and second write wiring lines, which has been turned on first, is turned off first.

19. The memory according to claim 1, wherein when the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, during no-current flow time, magnetization of the first ferromagnetic layer substantially equals composed magnetization of the second ferromagnetic layer and the third ferromagnetic layer.

20. The memory according to claim 1, wherein when the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling, during no-current flow time, composed magnetization of the first ferromagnetic layer and the second ferromagnetic layer substantially equals magnetization of the third ferromagnetic layer.