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Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof

  • US 20060017112A1
  • Filed: 07/20/2005
  • Published: 01/26/2006
  • Est. Priority Date: 07/21/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor having a first conductive channel, wherein the first transistor comprises a high-k gate dielectric and a first doped electrode, wherein the first conductive channel comprises one of p-type and n-type and the first doped electrode comprises the other of p-type and n-type; and

    a second transistor having a second conductive channel opposite the first conductive channel, wherein the second transistor comprises the high-k gate dielectric, and a second doped electrode, wherein the second doped electrode comprises the other of p-type and n-type.

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