Thin film semiconductor device and method of manufacturing the same, electro-optical device, and electronic apparatus
First Claim
Patent Images
1. A thin film semiconductor device comprising:
- a substrate;
a semiconductor film formed on the substrate; and
a protective circuit element that includes a PIN diode having the semiconductor film, and a floating electrode disposed opposite to an I layer of the PIN diode with an insulating film interposed therebetween.
1 Assignment
0 Petitions
Accused Products
Abstract
A thin film semiconductor device includes a substrate and a semiconductor film formed on the substrate. The thin film semiconductor device further includes a protective circuit element having a PIN diode having the semiconductor film, and a floating electrode disposed opposite to an I layer of the PIN diode with an insulating film disposed therebetween.
-
Citations
16 Claims
-
1. A thin film semiconductor device comprising:
-
a substrate;
a semiconductor film formed on the substrate; and
a protective circuit element that includes a PIN diode having the semiconductor film, and a floating electrode disposed opposite to an I layer of the PIN diode with an insulating film interposed therebetween. - View Dependent Claims (5, 6, 7, 8, 15, 16)
-
-
2. A thin film semiconductor device comprising:
-
a main circuit unit having a semiconductor element;
a terminal unit extending from the main circuit unit; and
a protective circuit unit disposed between the main circuit unit and the terminal unit, wherein all of the main circuit, the terminal unit, and the protective circuit are formed on a substrate, and the protective circuit unit includes a protective circuit element that includes a PIN diode having the semiconductor film, and a floating electrode disposed opposite to an I layer of the PIN diode with an insulating film interposed therebetween. - View Dependent Claims (3, 4, 9)
-
-
10. A method of manufacturing a thin film semiconductor device having a substrate and a semiconductor film formed on the substrate, the method comprising:
-
forming a protective circuit element, wherein the forming of the protective circuit element includes;
forming an insulating film on the semiconductor film formed on the substrate;
forming a conductive film on the insulating film to form a floating electrode overlapping the semiconductor film in plan view; and
forming a P layer, an N layer, and an I layer in the semiconductor film by introducing an impurity into the semiconductor film using the floating electrode as a mask to form a PIN diode.
-
-
11. A method of manufacturing a thin film semiconductor device including a main circuit unit having a semiconductor element, a terminal unit extending from the main circuit unit, and a protective circuit unit disposed between the main circuit unit and the terminal unit, all of which are formed on a substrate, the method comprising:
-
forming the protective circuit unit which includes forming of a protective circuit element, wherein the forming of the protective circuit element includes;
forming an insulating film on the semiconductor film formed on the substrate;
forming a conductive film on the insulating film to form a floating electrode overlapping the semiconductor film in plan view; and
forming a P layer, an N layer, and an I layer in the semiconductor film by introducing an impurity into the semiconductor film using the floating electrode as a mask to form a PIN diode. - View Dependent Claims (12, 13, 14)
-
Specification