System and method to modify the spatial response of a pattern generator

• US 20060019030A1
• Filed: 07/26/2004
• Published: 01/26/2006
• Est. Priority Date: 07/26/2004
• Status: Active Grant

• Current Assignee: ASML Holding NV
• Original Assignee: ASML Holding NV
• Inventors: Lipson, Matthew, Wilklow, Ronald A.
• Granted Patent: US 7,335,398 B2
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 14/044 using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 16/042 using masks
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: G03F 1/00 Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
• CPC Class Codes: G03F 1/50 Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70475 Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Abstract

Systems and methods are used to modify a layer on a substrate that is used to form a pattern generator, so that light reflecting from the modified substrate has a trapezoidal or other custom profile. The layer is modified using various vapor deposition techniques in conjunction with moving or positioning the substrate a desired distance from a blocking device and/or at a desired rate or speed.

Claims

1. A method, comprising:

(a) directing a material towards a layer of a pattern generator device to form a coating on the layer; and

(b) blocking at least some of the material from reaching the layer during step (a), such that a shape of light reflecting from the coating on the pattern generator device is trapezoidal.

2. The method of claim 1, wherein step (a) comprises using vapor deposition.

3. The method of claim 1, wherein step (a) comprises using physical vapor deposition.

4. The method of claim 1, wherein step (a) comprises using photochemical vapor deposition.

5. The method of claim 1, wherein step (b) comprises using a blocking device.

6. The method of claim 5, further comprising:

(c) moving the pattern generator device during step (a), such that the pattern generator device is maintained parallel to the blocking device.

7. The method of claim 6, further comprising controlling a thickness of the coating through control of a rate of the moving in step (c).

8. The method of claim 6, further comprising controlling a thickness of the coating through control of an exposure time of the material based on controlling the moving in step (c).

9. The method of claim 6, wherein step (a) comprises using physical vapor deposition.

10. The method of claim 5, further comprising:

(c) positioning the pattern generator device during step (a) along a plane that forms an acute angle with respect to an edge of the blocking device.

11. The method of claim 10, wherein step (a) comprises using physical vapor deposition.

12. The method of claim 5, further comprising:

(c) maintaining the pattern generator device substantially stationary, spaced from, and parallel to the blocking device, such that there is a gap between the pattern generator device and the blocking device.

13. The method of claim 12, wherein a size of the gap is substantially constant in a direction along a longitudinal axis of the blocking device.

14. The method of the claim 12, wherein a size of the gap continuously increases in a direction along a longitudinal axis of the blocking device.

15. The method of claim 12, wherein a thickness of the coating varies around an edge of the blocking device.

16. The method of claim 15, wherein the edge of the blocking device causes a shadowing effect in the coating.

17. The method of claim 5, further comprising:

(c) positioning the blocking device to cover a substantially central layer area of the pattern generator device.

18. The method of claim 17, wherein step (a) comprises using photochemical vapor deposition.

19. The method of claim 5, further comprising:

positioning the blocking device as one of a knife edge or a pupil stop.

20. An apparatus, comprising:

means for directing a material towards a layer of pattern generator device to form a coating on the layer;

means for blocking at least some of the material from reaching the layer, such that a shape of light reflecting from the coating on the pattern generator device is trapezoidal

21. The apparatus of claim 20, wherein the material is generated using a vapor deposition system.

22. The apparatus of claim 20, wherein the material is generated using a physical vapor deposition system.

23. The apparatus of claim 20, wherein the material is generated using a photochemical vapor deposition system.

24. The apparatus of claim 20, further comprising:

means for moving the pattern generator device, such that the pattern generator device is maintained parallel to the means for blocking.

25. The apparatus of claim 24, further comprising:

means for controlling a rate of the means for moving to control a thickness of the coating.

26. The apparatus of claim 24, further comprising:

means for controlling exposure characteristics of the material to control a thickness of the coating.

27. The apparatus of claim 26, wherein the material is generated using a physical vapor deposition system.

28. The apparatus of claim 20, wherein the pattern generator device is positioned along a plane that forms an acute angle with respect to an edge of the means for blocking.

29. The apparatus of claim 28, wherein the material is generated using a physical vapor deposition system.

30. The apparatus of claim 20, wherein the pattern generator device is maintained substantially stationary, spaced from, and parallel to the means for blocking, such that there is a gap between the pattern generator device and the means for blocking.

31. The apparatus of claim 30, wherein a size of the gap is substantially constant in a direction along a longitudinal axis of the means for blocking.

32. The apparatus of the claim 30, wherein a size of the gap continuously increases in a direction along a longitudinal axis of the means for blocking.

33. The apparatus of claim 30, wherein a thickness of the coating varies around an edge of the means for blocking.

34. The apparatus of claim 33, wherein the edge of the means for blocking causes a shadowing effect in the coating.

35. The apparatus of claim 20, wherein the blocking device is positioned to cover a substantially central layer area of the pattern generator device.

36. The apparatus of claim 35, wherein the material is generated using a photochemical vapor deposition system.

37. The apparatus of claim 20, wherein the blocking device is positioned to act as a pupil stop.

38. A method for modifying elements of a pattern generator, comprising:

providing the pattern generator having elements associated therewith; and

forming a radiation absorbing layer on at least a portion of the elements of the pattern generator.

39. The method of claim 38, wherein the forming step comprises using vapor deposition.

40. The method of claim 38, wherein the forming step comprises using physical vapor deposition.

41. The method of claim 38, wherein the forming step comprises using photo-chemical vapor deposition.

42. The method of claim 38, wherein the forming step forms a radiation absorbing layer on all the elements.

43. The method of claim 38, wherein the forming step forms a gradient across the elements, such that a thickness of the radiation absorbing layer varies across the pattern generator.

44. The method of claim 43, further comprising forming a linear gradient.

45. The method of claim 43, further comprising forming a non-linear gradient.

46. The method of claim 38, further comprising forming a trapeziodal pattern using the pattern generator based on the radiation absorbing layer.

47. A method for patterning a substrate, comprising:

directing radiation toward a pattern generator, the pattern generator having formed on at least a portion thereon a radiation absorption layer; and

positioning elements of the pattern generator to form trapezoidal patterns on regions of the substrate.

48. A method comprising for modification of a spatial light modulator (SLM) to aid spatial stitching of images projected by the SLM onto a substrate, comprising:

(a) directing a modifying device towards a surface of the SLM; and

(b) modifying a portion of the surface of the SLM to thereby change an optical response of the SLM in a controlled manner.

49. The method of claim 48, wherein step (b) causes the SLM to have a non-varying optical response.

50. The method of claim 48, wherein step (b) causes the SLM to have a continuously varying optical response.

51. The method of claim 50, wherein the continuously varying optical response has a linearly varying profile.

52. The method of claim 50, wherein the continuously varying optical response has a non-linearly varying profile.

53. The method of claim 48, wherein the SLM is a reflective SLM.

54. The method of claim 48, wherein the SLM is a transmissive SLM.