Plasma immersion ion implantation reactor having an ion shower grid
First Claim
1. A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece, comprising:
- providing a reactor chamber with an ion shower grid that divides said chamber into an upper ion generation region and a lower process region, said ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of said ion shower grid;
placing a workpiece in said process region;
furnishing said selected species into said ion generation region;
evacuating said process region;
applying plasma source power to generate a plasma of said selected species in said ion generation region, and applying a grid potential to said ion shower grid to create a flux of ions from the plasma through said grid and into said process region; and
applying a bias voltage to said workpiece.
1 Assignment
0 Petitions
Accused Products
Abstract
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.
-
Citations
98 Claims
-
1. A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece, comprising:
-
providing a reactor chamber with an ion shower grid that divides said chamber into an upper ion generation region and a lower process region, said ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of said ion shower grid;
placing a workpiece in said process region;
furnishing said selected species into said ion generation region;
evacuating said process region;
applying plasma source power to generate a plasma of said selected species in said ion generation region, and applying a grid potential to said ion shower grid to create a flux of ions from the plasma through said grid and into said process region; and
applying a bias voltage to said workpiece. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96)
-
-
35. The process of claim 34 wherein the step of depositing a layer of a process-compatible material comprises:
-
introducing a process gas comprising a precursor of said process-compatible material into said ion generation region;
applying plasma source power into said ion generation region. - View Dependent Claims (36)
-
-
37. The process of claim 34 wherein the step of depositing a layer of a process-compatible material comprises furnishing into at least one of said ion generation and process regions ions or radicals of said process-compatible material from a plasma source external of said chamber.
-
97. A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece, comprising:
-
providing a reactor chamber with an ion shower grid that divides said chamber into an upper ion generation region and a lower process region, said ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of said ion shower grid;
placing a workpiece in said process region, said workpiece having a workpiece surface generally facing the surface plane of said ion shower grid;
furnishing a said selected species into said ion generation region in gaseous, molecular or atomic form;
evacuating said process region at an evacuation rate sufficient to create a pressure drop across said ion shower grid from said ion generation region to said process region of about a factor of at least four;
applying plasma source power to generate a plasma of said selected species in said ion generation region, and applying a grid potential to said ion shower grid relative to at least one of (a) said workpiece, (b) a plasma in said ion generation region, (c) a surface of said chamber, to create a flux of ions from the plasma through said grid and into said process region with a kinetic energy distribution generally corresponding to said desired ion implantation depth profile in said workpiece. - View Dependent Claims (98)
-
Specification