Novel film for copper diffusion barrier
0 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
290 Citations
31 Claims
-
1-17. -17. (canceled)
-
18. A method of forming at least a portion of a semiconductor device, the method comprising:
-
forming a trench in a first dielectric layer;
depositing a metal diffusion barrier in the trench;
depositing a copper seed layer on the metal diffusion barrier;
forming a copper interconnect on the copper seed layer; and
forming a copper diffusion barrier on the copper interconnect, the copper diffusion barrier formed of a silicon-based material doped with boron. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
-
Specification