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Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor

  • US 20060019494A1
  • Filed: 09/21/2005
  • Published: 01/26/2006
  • Est. Priority Date: 03/04/2002
  • Status: Active Grant
First Claim
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1. A method for forming a tantalum-containing material on a substrate, comprising:

  • heating a substrate to a deposition temperature within a process chamber;

    heating an ampoule containing a tantalum precursor to a predetermined temperature within a range from about 50°

    C. to about 170°

    C. to form a tantalum precursor gas;

    flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°

    C. to about 170°

    C.; and

    exposing the substrate to at least sequential pulses of the tantalum precursor gas and a nitrogen precursor during an atomic layer deposition process to deposit a tantalum nitride material thereon.

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