Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
First Claim
1. A method for forming a tantalum-containing material on a substrate, comprising:
- heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.; and
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a nitrogen precursor during an atomic layer deposition process to deposit a tantalum nitride material thereon.
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Abstract
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
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Citations
38 Claims
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1. A method for forming a tantalum-containing material on a substrate, comprising:
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heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.; and
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a nitrogen precursor during an atomic layer deposition process to deposit a tantalum nitride material thereon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for forming a tantalum-containing material on a substrate, comprising:
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heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.;
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a nitrogen precursor during an atomic layer deposition process to deposit a tantalum nitride material thereon;
depositing a nucleation layer on the tantalum nitride material; and
depositing a bulk layer on the nucleation layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for forming a tantalum-containing material on a substrate, comprising:
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heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.; and
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a radical nitrogen compound during a plasma-enhanced atomic layer deposition process to deposit a tantalum nitride material thereon. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A method for forming a tantalum-containing material on a substrate, comprising:
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heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a metal-organic tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.; and
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a radical nitrogen compound during a plasma-enhanced atomic layer deposition process to deposit a tantalum nitride material thereon.
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38. A method for forming a tantalum-containing material on a substrate, comprising:
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heating a substrate to a deposition temperature within a process chamber;
heating an ampoule containing a metal-organic tantalum precursor to a predetermined temperature within a range from about 50°
C. to about 170°
C. to form a tantalum precursor gas;
flowing the tantalum precursor gas through a conduit and into the process chamber while maintaining the conduit at a temperature within a range from about 50°
C. to about 170°
C.;
exposing the substrate to at least sequential pulses of the tantalum precursor gas and a radical nitrogen compound during a plasma-enhanced atomic layer deposition process to deposit a tantalum nitride material thereon;
depositing a nucleation layer on the tantalum nitride material; and
depositing a bulk layer on the nucleation layer.
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Specification