Multi-gas distribution injector for chemical vapor deposition reactors
First Claim
1. A method of chemical vapor deposition comprising:
- (a) discharging at least one precursor gas as a plurality of streams into a reaction chamber through a plurality of spaced-apart precursor inlets in a gas distribution injector so that the streams have a component of velocity in a downstream direction away from said injector towards one or more substrates disposed in said chamber, said at least one precursor gas reacting to form a reaction deposit on said one or more substrates; and
, simultaneously, (b) discharging at least one carrier gas substantially nonreactive with said at least one precursor gases into said chamber from said injector between a plurality of adjacent ones of said precursor inlets.
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Accused Products
Abstract
A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial.
405 Citations
49 Claims
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1. A method of chemical vapor deposition comprising:
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(a) discharging at least one precursor gas as a plurality of streams into a reaction chamber through a plurality of spaced-apart precursor inlets in a gas distribution injector so that the streams have a component of velocity in a downstream direction away from said injector towards one or more substrates disposed in said chamber, said at least one precursor gas reacting to form a reaction deposit on said one or more substrates; and
, simultaneously,(b) discharging at least one carrier gas substantially nonreactive with said at least one precursor gases into said chamber from said injector between a plurality of adjacent ones of said precursor inlets. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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- 14. A gas distribution injector for a chemical vapor deposition reactor, said injector comprising a structure defining an interior surface facing in a downstream direction and having a horizontal extent, a plurality of precursor inlets open to said interior surface at horizontally-spaced precursor inlet locations, one or more precursor gas connections and one or more precursor manifolds connecting said one or more precursor gas connections with said precursor inlets, said structure including a porous element having first and second surfaces, said second surface of said porous element defining at least a portion of said interior surface between at least some of said precursor inlet locations, said structure further defining a carrier gas manifold at least partially bounded by said first surface of said porous element and at least one carrier gas connection communicating with said carrier gas manifold.
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18. An injector as claimed in claim 18 wherein said one or more coolant passages are disposed between said carrier gas manifold and said at least one precursor gas manifold.
- 25. An injector for a chemical vapor deposition reactor comprising structure defining an inner surface facing in a downstream direction and extending in horizontal directions transverse to said downstream direction, said structure further defining a plurality of concentric stream inlets opening through said inner surface at horizontally-spaced stream locations, each said concentric stream inlet including a first gas channel open to said inner surface at a first port and a second gas channel open to the inner surface at a second port substantially surrounding the first port, said structure further including at least one first gas manifold connected to said first gas channels, at least one second gas manifold connected to said second gas channels.
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34. A gas distribution system for a CVD reactor, comprising:
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a gas distribution injector structure defining an inner surface facing in a downstream direction and extending in horizontal directions transverse to the downstream direction, said injector structure defining a plurality of precursor inlets open to said inner surface at horizontally-spaced precursor inlet locations, said injector structure also defining a plurality of carrier gas openings open to said inner surface between said precursor inlet locations;
at least one precursor gas source connected to said precursor inlets for supplying at least one precursor gas; and
at least one carrier gas source connected to said carrier gas openings for supplying at least one carrier gas substantially nonreactive with said at least one precursor gas to said carrier openings so that said carrier gas inhibits deposits formed from said at least one precursor from depositing on said inner surface. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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- 46. An injector for a chemical vapor deposition reactor comprising structure defining an inner surface facing in a downstream direction and extending in horizontal directions transverse to said downstream direction, said structure further defining at least one manifold and a plurality of inlets opening through said inner surface at horizontally-spaced inlet locations and individual conduits connecting each of said inlets to one said manifold, said structure including individual flow restriction elements associated with at least some of said conduits.
Specification