Closed loop clean gas control
First Claim
1. A method of removing deposits formed on interior surfaces of a processing chamber, the method comprising:
- forming a plasma from a cleaning gas mixture, wherein the plasma includes a reactive cleaning species;
reacting the reactive cleaning species with a first portion of the deposits on the interior surfaces of the processing chamber to form a reaction product;
generating a feedback signal having information about a concentration of the reaction product; and
adjusting the flow rate for the cleaning gas mixture based on the feedback signal and reacting the reactive cleaning species with a second portion of the deposits.
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Accused Products
Abstract
A feedback loop cleaning system to remove deposits formed on interior surfaces of a processing chamber that includes a flow controller to set a flow rate for a cleaning gas mixture supplied to a plasma generating system, where the plasma generating system forms a plasma from the cleaning gas mixture, said plasma including a reactive cleaning species; a detector to generate a feedback signal having information about a concentration of a reaction product formed by a reaction of the reactive cleaning species with the deposits formed on the interior surfaces of the processing chamber; and a processor to convert the feedback signal into a control signal, wherein the control signal is used to adjust the flow rate of the cleaning gas mixture at the flow controller. Also, a method of removing deposits formed on interior surfaces of the processing chamber.
75 Citations
28 Claims
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1. A method of removing deposits formed on interior surfaces of a processing chamber, the method comprising:
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forming a plasma from a cleaning gas mixture, wherein the plasma includes a reactive cleaning species;
reacting the reactive cleaning species with a first portion of the deposits on the interior surfaces of the processing chamber to form a reaction product;
generating a feedback signal having information about a concentration of the reaction product; and
adjusting the flow rate for the cleaning gas mixture based on the feedback signal and reacting the reactive cleaning species with a second portion of the deposits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A feedback loop cleaning process for removing silicon oxide deposits formed on interior surfaces of a processing chamber, the process comprising:
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forming a plasma from a cleaning gas mixture comprising nitrogen trifluoride (NF3) and argon, wherein the plasma include reactive fluorine ions;
reacting the fluorine ions with a first portion of the silicon oxide deposits to form silicon tetrafluoride (SiF4);
generating a SiF4 detection signal containing information on a concentration of the SiF4 in an effluent from the processing chamber; and
adjusting the flow rate for the cleaning gas mixture based on the SiF4 detection signal, and reacting the fluorine ions with a second portion of the silicon oxide deposits. - View Dependent Claims (20, 21, 22)
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23. A feedback loop cleaning system to remove deposits formed on interior surfaces of a processing chamber, the system comprising:
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a flow controller to set a flow rate for a cleaning gas mixture supplied to a plasma generating system, wherein the plasma generating system forms a plasma from the cleaning gas mixture, said plasma including a reactive cleaning species;
a detector to generate a feedback signal having information about a concentration of a reaction product formed by a reaction of the reactive cleaning species with the deposits formed on the interior surfaces of the processing chamber; and
a processor to convert the feedback signal into a control signal, wherein the control signal is used to adjust continuously the flow rate of the cleaning gas mixture at the flow controller. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification