Dual-chamber plasma processing apparatus

• US 20060021701A1
• Filed: 07/29/2004
• Published: 02/02/2006
• Est. Priority Date: 07/29/2004
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Tobe, Yasuhiro, Ikeda, Shingo, Morisada, Yoshinori, Kawano, Baiei
• Granted Patent: US 7,381,291 B2
• Time in Patent Office: Days
• US Class Current: 156/345.310
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.

Claims

1. A dual-chamber plasma processing apparatus comprising:

a first evacuatable chamber;

a first radio-frequency (RF) power source;

a first shower plate for introducing a gas into the first chamber, said first shower plate being connected to the first RF power source;

a second shower plate for passing a gas present in the first chamber therethrough, said second shower plate being insulated from the first shower plate;

a first RF matching circuit in an enclosure, said circuit being connected to the first shower plate, said enclosure being connected to the second shower plate, wherein RF power applied from the first RF power source to the first shower plate via the first RF matching circuit returns to the first RF power source via the second shower plate and the enclosure for the first RF matching circuit;

a second evacuatable chamber;

a second RF power source;

a support for supporting an object-to-be-processed thereon, said support being connected to the second RF power source, said support being insulated from the second shower plate, wherein the second shower plate is configured to introduce a gas into the second chamber; and

a second RF matching circuit in an enclosure, said circuit being connected to the support, said enclosure being connected to the second shower plate, wherein RF power applied from the second RF power source to the support via the second RF matching circuit returns to the second RF power source via the second shower plate and the enclosure for the second RF matching circuit.

2. The dual-chamber plasma processing apparatus according to claim 1, wherein the second shower plate has two gas flow paths separated from each other, one path comprising holes passing through the second shower plate, the other path comprising an enclosed compartment connected to an external gas supply line and having multiple holes on its lower surface.

3. The dual-chamber plasma processing apparatus according to claim 1, wherein the second chamber is movable to a position for processing and to a position for loading and unloading an object-to-be-processed.

4. The dual-chamber plasma processing apparatus according to claim 2, wherein the second shower plate is comprised of an upper shower plate and a lower shower plate, said upper shower plate being connected to the first chamber, said lower shower plate being connected to the second chamber, wherein when the second chamber is at the position for processing, the upper shower plate and the lower shower plate are gas-tightly connected.

5. The dual-chamber plasma processing apparatus according to claim 4, wherein the upper shower plate and the lower shower plate are sealed using an O-ring.

6. The dual-chamber plasma processing apparatus according to claim 4, wherein the lower shower plate has two gas flow paths separated from each other, a first path comprising holes passing through the lower shower plate, a second path comprising an enclosed compartment connected to an external gas supply line via the upper shower plate and having multiple holes on its lower surface, and wherein the upper shower plate has holes corresponding to the holes of the first path of the lower shower plate, and the external gas supply line is connected to the upper shower plate.

7. The dual-chamber plasma processing apparatus according to claim 1, wherein the first shower plate is connected to an external gas supply line which is different from an external gas supply line connected to the second shower plate.

8. The dual-chamber plasma processing apparatus according to claim 1, wherein the first chamber has an inner sidewall which is conductive and connected to the second shower plate but insulated from the first shower plate.

9. The dual-chamber plasma processing apparatus according to claim 1, wherein the second chamber has an inner sidewall which is conductive and connected to the second shower plate but insulated from the support.

10. The dual-chamber plasma processing apparatus according to claim 1, wherein the second chamber is connected to an exhaust system.

11. The dual-chamber plasma processing apparatus according to claim 1, wherein the first RF matching circuit and the second RF matching circuit are provided with no RF filter.

12. The dual-chamber plasma processing apparatus according to claim 1, wherein the first shower plate and the support are provided with a heater.

45. A method of plasma CVD using the dual-chamber plasma possessing apparatus of claim 1, comprising:

introducing a gas to the first chamber;

introducing a gas to the second chamber;

applying RF power from the first RF power source to the first chamber via the first RF matching box and the first shower plate, thereby exciting the gas in the first chamber;

returning RF power to the first RF power source via the second shower plate and an enclosure of the first RF matching box;

applying RF power from the second RF power source to the second chamber via the second RF matching box and the support, thereby exciting the gas in the second chamber to treat the object-to-be-processed; and

returning RF power to the second RF power source via the second shower plate and an enclosure of the second RF matching box, without interfering with the RF power returning to the first RF power source.

46. The method according to claim 45, wherein the treatment of the object-to-be-processed is deposition of a film on the object-to-be-treated.

47. The method according to claim 45, wherein the treatment of the object-to-be-processed is etching of a film formed on the object-to-be-treated.

13. A dual-chamber plasma processing apparatus comprising:

a first evacuatable chamber;

a first radio-frequency (RF) power source;

a first shower plate for introducing a first gas into the first chamber, said first shower plate being connected to the first RF power source;

an intermediate shower plate for passing gas present in the first chamber therethrough, said intermediate shower plate being insulated from the first shower plate;

a first RF matching circuit in an enclosure, said circuit being connected to the first shower plate, said enclosure being connected to the intermediate shower plate, wherein RF power applied from the first RF power source to the first shower plate via the first RF matching circuit returns to the first RF power source via the intermediate shower plate and the enclosure for the first RF matching circuit;

a second evacuatable chamber;

a second RF power source;

a support for supporting an object-to-be-processed thereon, said support being connected to the second RF power source;

a second shower plate for introducing a second gas and passing gas present in the first chamber therethrough into the second chamber, said second shower plate being insulated from the support; and

a second RF matching circuit in an enclosure, said circuit being connected to the support, said enclosure being connected to the second shower plate, wherein RF power applied from the second RF power source to the support via the second RF matching circuit returns to the second RF power source via the second shower plate and the enclosure for the second RF matching circuit.

48. A method of plasma CVD using the dual-chamber plasma possessing apparatus of claim 13, comprising:

introducing a gas to the first chamber;

introducing a gas to the second chamber;

applying RF power from the first RF power source to the first chamber via the first RF matching box and the first shower plate, thereby exciting the gas in the first chamber;

returning RF power to the first RF power source via the intermediate shower plate and an enclosure of the first RF matching box;

applying RF power from the second RF power source to the second chamber via the second RF matching box and the support, thereby exciting the gas in the second chamber to treat the object-to-be-processed; and

returning RF power to the second RF power source via the second shower plate and an enclosure of the second RF matching box, without interfering with the RF power returning to the first RF power source.

49. The method according to claim 48, wherein the treatment of the object-to-be-processed is deposition of a film on the object-to-be-treated.

50. The method according to claim 48, wherein the treatment of the object-to-be-processed is etching of a film formed on the object-to-be-treated.

14. A dual-chamber plasma processing apparatus comprising:

a first evacuatable chamber to which a gas is introduced;

a top plate disposed in and insulated from the first chamber;

a first external radio-frequency (RF) power source and a first RF matching box for applying RF power to the top plate via the first RF matching box;

a second evacuatable chamber to which a gas is introduced;

a support disposed in the second chamber for supporting an object-to-be-processed thereon; and

a second external RF power source and a second RF matching box for applying RF power to the support via the matching box,

wherein the RF power applied to the top plate from the first RF power source and the RF power applied to the support from the second RF power source return to the first and second RF power sources, respectively, via an inner surface of the first chamber and an inner surface of the first RF matching box and via an inner surface of the second chamber and an inner surface of the second RF matching box, respectively.

15. The dual-chamber plasma processing apparatus according to claim 14, wherein the first and second chambers are each connected to different gas supply lines.

16. The dual-chamber plasma processing apparatus according to claim 14, wherein excitation of respective gases introduced to the respective first and second chambers is controlled separately.

17. The dual-chamber plasma processing apparatus according to claim 14, wherein the top plate is a shower plate having a number of gas blowoff pores.

18. The dual-chamber plasma processing apparatus according to claim 14, further comprising at a bottom of the first chamber an upper shower plate through which excited gas in the first chamber passes to the second chamber.

19. The dual-chamber plasma processing apparatus according to claim 18, further comprising on top of the second chamber a lower shower plate having a number of pores for emitting excited gas from the first chamber to the second chamber and a number of pores for emitting a processing gas from an external source to the second chamber.

20. The dual-chamber plasma processing apparatus according to claim 19, wherein the upper shower plate and the lower shower plate are separate portions.

21. The dual-chamber plasma processing apparatus according to claim 19, wherein the upper shower plate and the lower shower plate are integrated.

22. The dual-chamber plasma processing apparatus according to claim 14, wherein the first RF power source and the second RF power source are independently controllable.

23. The dual-power plasma processing apparatus according to claim 14, wherein the first and second chambers are each surrounded by an electrically conductive sidewall.

24. The dual-chamber plasma processing apparatus according to claim 14, wherein the first shower plate and the support are provided with a heater.

51. A method of plasma CVD using the dual-chamber plasma possessing apparatus of claim 14, comprising:

introducing a gas to the first chamber;

introducing a gas to the second chamber;

applying RF power from the first RF power source to the first chamber via the first RF matching box and the top plate, thereby exciting the gas in the first chamber;

returning RF power to the first RF power source via the inner surface of the first chamber and an enclosure of the first RF matching box;

applying RF power from the second RF power source to the second chamber via the second RF matching box and the support, thereby exciting the gas in the second chamber to treat the object-to-be-processed; and

returning RF power to the second RF power source via the inner surface of the second chamber and an enclosure of the second RF matching box, without interfering with the RF power returning to the first RF power source.

52. The method according to claim 51, wherein the treatment of the object-to-be-processed is deposition of a film on the object-to-be-treated.

53. The method according to claim 51, wherein the treatment of the object-to-be-processed is etching of a film formed on the object-to-be-treated.

25. A dual-chamber plasma processing apparatus comprising:

a first reaction chamber for a plasma generated by RF waves applied from an upper electrode provided therein, wherein a gas supply system is connected to the first reaction chamber;

a second reaction chamber for a plasma generated by RF waves applied from a lower electrode provided therein, wherein an object-to-be-treated is placed in the second reaction chamber, and a gas supply system and a gas discharge system are connected to the second reaction chamber; and

an electrically conductive plate for dividing the first reaction chamber and the second reaction chamber, said plate being capable of passing gas from the first reaction chamber to the second reaction chamber, wherein the RF waves applied from the upper electrode and the RF waves applied from the lower electrode are separately controlled and return to the upper electrode and the lower electrode via the plate, respectively.

26. The dual-chamber plasma processing apparatus according to claim 25, wherein the upper electrode is a shower plate connected to the gas supply system.

27. The dual-chamber plasma processing apparatus according to claim 25, wherein the lower electrode is a susceptor.

28. The dual-chamber plasma processing apparatus according to claim 25, wherein the electrically conductive plate is a shower plate connected to the gas supply system.

29. A dual-chamber plasma processing apparatus comprising two reaction spaces connected in fluid communication where a substrate is to be placed in one of the reaction spaces, said reaction spaces being equipped with different gas inlet lines and different RF systems, each reaction space being provided with an RF wave entry path and an RF wave return path to supply RF power to the reaction space from an RF power source and return the RF power to the same RF power source.

30. The dual-chamber plasma processing apparatus according to claim 29, wherein the two reaction spaces are an upper reaction space and a lower reaction space, and the substrate is to be placed in the lower reaction space.

31. The dual-chamber plasma processing apparatus according to claim 30, wherein the upper reaction space comprises an upper shower plate for introducing gas into the upper reaction space, and the lower reaction space comprises a susceptor on which the substrate is to be placed.

32. The dual-chamber plasma processing apparatus according to claim 31, wherein the upper reaction space and the lower reaction space are separated by an intermediate shower plate which passes gas from the upper reaction chamber to the lower reaction chamber and introduces gas from an external gas source into the lower reaction space.

33. The dual-chamber plasma processing apparatus according to claim 31, wherein the RF wave entry path in the upper reaction space is constituted by the upper shower plate, and the RF wave return path in the upper reaction space is constituted by the intermediate shower plate and an inner wall surrounding the upper reaction space.

34. The dual-chamber plasma processing apparatus according to claim 31, wherein the RF wave entry path in the lower reaction space is constituted by the susceptor, and the RF wave return path in the lower reaction space is constituted by the intermediate shower plate and an inner wall surrounding the lower reaction space.

35. The dual-chamber plasma processing apparatus according to claim 33, wherein the RF system for the upper reaction space includes an upper RF matching box through which RF power is supplied to the upper reaction space via the RF wave entry path, and to which the RF power returns via the RF wave return path.

36. The dual-chamber plasma processing apparatus according to claim 34, wherein the RF system for the lower reaction space includes a lower RF matching box through which RF power is supplied to the lower reaction space via the RF wave entry path, and to which the RF power returns via the RF wave return path.

37. The dual-chamber plasma processing apparatus according to claim 35, wherein the RF system for the upper reaction space is provided with no band filter.

38. The dual-chamber plasma processing apparatus according to claim 36, wherein the RF system for the lower reaction space is provided with no band filter.

39. The dual-chamber plasma processing apparatus according to claim 32, wherein the intermediate shower plate is comprised of a top plate and a bottom plate which are separably attached, and the lower reaction space moves between a processing position and a loading/unloading position, wherein the bottom plate moves with the lower reaction space.

40. A dual-chamber plasma processing apparatus comprising:

a first evacuatable chamber;

a first shower plate for introducing a gas into the first chamber, said first shower plate being enclosed by a first conductive chassis insulated from the first shower plate;

a. second shower plate for passing a gas present in the first chamber therethrough, said second shower plate being insulated from the first shower plate and connected to the first conductive chassis;

a first RF matching circuit in an enclosure, said circuit being connected to the first shower plate, said enclosure being connected to the first conductive chassis;

a second evacuatable chamber;

a support for supporting an object-to-be-processed thereon, said support being insulated from the second shower plate and enclosed by a second conductive chassis insulated from the support; and

a second RF matching circuit in an enclosure, said circuit being connected to the support, said enclosure being connected to the second conductive chassis

41. The dual-chamber plasma processing apparatus according to claim 40, wherein in the first chamber, RF waves travel the first RF matching circuit, a surface of the first shower plate, a space between the first shower plate and the second shower plate, a surface of the second shower plate, an inner surface of the first conductive chassis, and an inner surface of the enclosure for the first RF matching circuit in sequence.

42. The dual-chamber plasma processing apparatus according to claim 40, wherein in the second chamber, RF waves travel the second RF matching circuit, a surface of the support, a space between the second shower plate and the support, a surface of the second shower plate, an inner surface of the second conductive chassis, and an inner surface of the enclosure for the second RF matching circuit in sequence.

43. The dual-chamber plasma processing apparatus according to claim 40, wherein the second shower plate is comprised of an upper shower plate and a lower shower plate which are detachable and attachable, said lower shower plate being attached to the second conductive chassis.

44. The dual-chamber plasma processing apparatus according to claim 43, wherein the lower shower plate, the second conductive chassis, and the support are movable relative to the upper shower plate and the first shower plate.