METHOD OF DOUBLE-SIDED ETCHING
First Claim
Patent Images
1. A method of double-sided etching, comprising:
- providing a wafer comprising at least a first region and at least a second region, an area of the first region being smaller than an area of the second region, and the second region being partially overlapped with the first region;
performing a first photo-etching process (PEP) upon a first surface of the wafer to remove the wafer in the first region until a predetermined depth;
bonding the first surface of the wafer to a carrier; and
performing a second photo-etching process upon a second surface of the wafer to remove a portion of the wafer in the second region not overlapped with the first region until the wafer is etched through.
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Abstract
A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding layer, and the wafer in the through regions is completely removed from the top surface.
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Citations
11 Claims
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1. A method of double-sided etching, comprising:
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providing a wafer comprising at least a first region and at least a second region, an area of the first region being smaller than an area of the second region, and the second region being partially overlapped with the first region;
performing a first photo-etching process (PEP) upon a first surface of the wafer to remove the wafer in the first region until a predetermined depth;
bonding the first surface of the wafer to a carrier; and
performing a second photo-etching process upon a second surface of the wafer to remove a portion of the wafer in the second region not overlapped with the first region until the wafer is etched through. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a micro spindle, comprising:
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providing a wafer comprising at least a spindle region and two through regions, the two through regions being respectively positioned on both sides of the spindle region;
partially removing the wafer in the spindle region from a first surface of the wafer; and
removing the wafer in the two through regions from a second surface of the wafer until the wafer is removed through to the first surface. - View Dependent Claims (8, 9, 10, 11)
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Specification