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METHOD OF DOUBLE-SIDED ETCHING

  • US 20060021965A1
  • Filed: 10/12/2004
  • Published: 02/02/2006
  • Est. Priority Date: 07/30/2004
  • Status: Active Grant
First Claim
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1. A method of double-sided etching, comprising:

  • providing a wafer comprising at least a first region and at least a second region, an area of the first region being smaller than an area of the second region, and the second region being partially overlapped with the first region;

    performing a first photo-etching process (PEP) upon a first surface of the wafer to remove the wafer in the first region until a predetermined depth;

    bonding the first surface of the wafer to a carrier; and

    performing a second photo-etching process upon a second surface of the wafer to remove a portion of the wafer in the second region not overlapped with the first region until the wafer is etched through.

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