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Transparent amorphous carbon structure in semiconductor devices

  • US 20060022247A1
  • Filed: 08/30/2005
  • Published: 02/02/2006
  • Est. Priority Date: 09/12/2003
  • Status: Abandoned Application
First Claim
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1. A memory device comprising:

  • a substrate having a plurality of doped regions;

    a plurality of gate structures over the substrate;

    an insulating layer over the gate structures;

    a plurality of contacts, each of the contacts being located between two gate structures, each of the contacts extending through the insulating layer and contacting one of the doped regions; and

    an amorphous carbon layer over the substrate, wherein the amorphous carbon layer is transparent in visible light range.

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