Semiconductor device and a manufacturing method of the same
First Claim
1. A semiconductor device comprising:
- a semiconductor chip having a field effect transistor, and a schottky barrier diode connected in parallel with the field effect transistor, wherein, in the semiconductor chip, a plurality of transistor cell formation regions comprising the field effect transistor are disposed to interpose therebetween a formation region of the schottky barrier diode; and
wherein, over a main surface of the semiconductor chip, a first metal gate interconnect extending along a periphery of the semiconductor chip and a plurality of second metal gate interconnects extending over the plurality of transistor cell formation regions from the first metal gate interconnect toward the schottky barrier diode formation region so as to interpose the schottky barrier diode formation region between the plurality of second metal gate interconnects are arranged.
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Accused Products
Abstract
In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET GF low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chips and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.
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Citations
17 Claims
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1. A semiconductor device comprising:
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a semiconductor chip having a field effect transistor, and a schottky barrier diode connected in parallel with the field effect transistor, wherein, in the semiconductor chip, a plurality of transistor cell formation regions comprising the field effect transistor are disposed to interpose therebetween a formation region of the schottky barrier diode; and
wherein, over a main surface of the semiconductor chip, a first metal gate interconnect extending along a periphery of the semiconductor chip and a plurality of second metal gate interconnects extending over the plurality of transistor cell formation regions from the first metal gate interconnect toward the schottky barrier diode formation region so as to interpose the schottky barrier diode formation region between the plurality of second metal gate interconnects are arranged. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a semiconductor chip having a field effect transistor, and a schottky barrier diode connected in parallel with the field effect transistor, wherein a plurality of transistor cell formation regions constituting the field effect transistor and a formation region of the schottky barrier diode are disposed in the semiconductor chip; and
wherein a center position of the formation region of the schottky barrier diode is not identical to a center position of the semiconductor chip. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17-18. -18. (canceled)
Specification