Dielectric structure

• US 20060022304A1
• Filed: 07/28/2005
• Published: 02/02/2006
• Est. Priority Date: 07/29/2004
• Status: Abandoned Application

• Current Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Original Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Inventors: Rzeznik, Maria Anna
• Application Number:
  US11/191,486
• Publication Number:
  US 20060022304A1
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: H01G 4/08 Inorganic dielectrics
• CPC Class Codes: H01G 4/12 Ceramic dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01G 4/20 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 H01G4/12 takes precedence
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 28/82 with an enlarged surface, e.g. formed by texturisation
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0175 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
• CPC Class Codes: H05K 2201/0195 Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
• CPC Class Codes: H05K 2201/0209 Inorganic, non-metallic particles
• CPC Class Codes: H05K 2201/09509 Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 3/181 by electroless plating adhesives therefor H05K3/387

Abstract

Dielectric structures particularly suitable for use in capacitors having a layer of a dielectric material including a dopant that provides a positive topography are disclosed. Methods of forming such dielectric structures are also disclosed. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Claims

1. A dielectric structure comprising a dielectric material layer disposed on a substrate, wherein the dielectric material comprises a dielectric dopant-containing region and a non-dopant-containing region, the dopant-containing region forming a positive topography at a surface of the dielectric structure.

2. The dielectric structure of claim 1 wherein the dielectric dopant has a dielectric constant that is substantially the same as a dielectric constant of the dielectric material.

3. The dielectric structure of claim 1 wherein the dielectric material has a dielectric constant ≧

10.

4. The dielectric structure of claim 1 wherein the substrate is a conductive layer.

10. A method of forming the dielectric structure of claim 1 comprising the steps of disposing a layer of a first dielectric material on a substrate, disposing a layer of a dielectric dopant-containing dielectric material on the first dielectric material, and annealing the layers of dielectric materials to form the dielectric structure.

5. A capacitor comprising a first electrode, a second electrode and a dielectric structure disposed between the electrodes, wherein the dielectric structure comprises a dielectric material comprising a dielectric dopant-containing region and a non-dielectric dopant-containing region, wherein the dielectric dopant-containing region is adjacent the first electrode.

6. The capacitor of claim 5 wherein the dielectric material is chosen from ceramics, metal oxides and combinations thereof.

7. The capacitor of claim 5 wherein the dielectric material and the dopant have substantially the same dielectric constant.

8. The capacitor of claim 5 wherein the dielectric layer and the dopant have substantially the same coefficient of thermal expansion.

9. An electronic device comprising the capacitor of claim 5.