Sample analysis apparatus and analysis method

• US 20060023221A1
• Filed: 08/02/2005
• Published: 02/02/2006
• Est. Priority Date: 08/02/2004
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Kimura, Toshihito
• Granted Patent: US 7,812,955 B2
• Time in Patent Office: Days
• US Class Current: 356/445
• CPC Class Codes: G01N 21/553 and using surface plasmons fluorescence excitation G01N21/648; enhanced Raman G01N21/658

Abstract

A light beam irradiating optical system is associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being brought into contact with a surface of the thin film layer. The light beam irradiating optical system produces and irradiates a light beam to an interface between the dielectric material member and the thin film layer. The light beam is constituted of light beam components, which have various different incidence angles with respect to the interface, and which have intensities varying in accordance with the incidence angles. A single measuring detector for outputting a signal representing an intensity of an entire area of received light is secured and located so as to receive the light beam having been reflected from the interface.

Claims

1. A sample analysis apparatus, comprising:

i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being capable of being brought into contact with a surface of the thin film layer,

the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer,

the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, and

ii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer.

2. An apparatus as defined in claim 1 wherein the light beam irradiating optical system is provided with means for altering the range of the incidence angles, which the light beam embraces.

3. An apparatus as defined in claim 1 wherein the light beam irradiating optical system is provided with means for altering a beam diameter of the entire area of the light beam.

4. An apparatus as defined in claim 2 wherein the light beam irradiating optical system is provided with means for altering a beam diameter of the entire area of the light beam.

5. An apparatus as defined in claim 1 wherein the light beam, which is produced by the light beam irradiating optical system, has beam cross-sectional intensities, which monotonously increase or monotonously decrease in accordance with the incidence angles, in an incidence plane of a middle beam of the light beam with respect to the interface between the dielectric material member and the thin film layer.

6. An apparatus as defined in claim 1 wherein the light beam irradiating optical system produces the light beam by producing a beam, which has a Gaussian beam cross-sectional intensity distribution in a plane parallel with an incidence plane of a middle beam of the light beam with respect to the interface between the dielectric material member and the thin film layer, and converging or diverging the beam toward the interface between the dielectric material member and the thin film layer.

7. An apparatus as defined in claim 6 wherein the measuring detector is located so as to receive only a region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which region corresponds to one side of the Gaussian beam cross-sectional intensity distribution.

8. An apparatus as defined in claim 1 wherein the light beam irradiating optical system and the measuring detector are secured and located within a housing, and

a sample support section, which comprises the dielectric material member and the thin film layer, is formed at a first surface of the housing, such that the thin film layer is exposed to the exterior of the housing.

9. An apparatus as defined in claim 8 wherein the light beam irradiating optical system comprises a light source section, and

the light source section and the measuring detector are secured and located on a second surface within the housing, which second surface is different from the first surface of the housing.

10. An apparatus as defined in claim 7 wherein the apparatus further comprises a light intensity monitoring detector for detecting an intensity of the whole or part of a remaining region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which remaining region is other than the region received by the measuring detector.

11. An apparatus as defined in claim 1 wherein the light beam, which is produced by the light beam irradiating optical system, is constituted of a first polarized light beam and a second polarized light beam, which are mixed together in a predetermined ratio, and

the apparatus further comprises:

a polarization beam splitter for splitting the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer, into the first polarized light beam and the second polarized light beam, the polarization beam splitter being located such that only the first polarized light beam is received by the measuring detector, and

a light intensity monitoring detector for detecting an intensity of the whole or part of the second polarized light beam.

12. An apparatus as defined in claim 10 wherein the light beam irradiating optical system, the measuring detector, and the light intensity monitoring detector are secured and located within a housing, and

a sample support section, which comprises the dielectric material member and the thin film layer, is formed at a first surface of the housing, such that the thin film layer is exposed to the exterior of the housing.

13. An apparatus as defined in claim 11 wherein the light beam irradiating optical system, the measuring detector, and the light intensity monitoring detector are secured and located within a housing, and

a sample support section, which comprises the dielectric material member and the thin film layer, is formed at a first surface of the housing, such that the thin film layer is exposed to the exterior of the housing.

14. An apparatus as defined in claim 12 wherein

the light beam irradiating optical system comprises a light source section, and the light source section, the measuring detector, and the light intensity monitoring detector are secured and located on a second surface within the housing, which second surface is different from the first surface of the housing.

15. An apparatus as defined in claim 13 wherein

the light beam irradiating optical system comprises a light source section, and the light source section, the measuring detector, and the light intensity monitoring detector are secured and located on a second surface within the housing, which second surface is different from the first surface of the housing.

16. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:

i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer,

the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer,

the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, and

ii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer,

the method comprising the steps of;

a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer,

a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, being thereby obtained,

b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer,

a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, being thereby obtained, and

c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between the first measurement signal and the second measurement signal,

the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.

17. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:

i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer,

the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer,

the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface,

the light beam irradiating optical system producing the light beam by producing a beam, which has a Gaussian beam cross-sectional intensity distribution in a plane parallel with an incidence plane of a middle beam of the light beam with respect to the interface between the dielectric material member and the thin film layer, and converging or diverging the beam toward the interface between the dielectric material member and the thin film layer,

ii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only a region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which region corresponds to one side of the Gaussian beam cross-sectional intensity distribution, and

iii) a light intensity monitoring detector for detecting an intensity of the whole or part of a remaining region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which remaining region is other than the region received by the measuring detector,

the method comprising the steps of;

a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer,

a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a first monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained,

b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer,

a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a second monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, and

c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal,

the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.

18. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:

i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer,

the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer,

the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface,

the light beam, which is produced by the light beam irradiating optical system, being constituted of a first polarized light beam and a second polarized light beam, which are mixed together in a predetermined ratio,

ii) a polarization beam splitter for splitting the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer, into the first polarized light beam and the second polarized light beam,

iii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only the first polarized light beam, and

iv) a light intensity monitoring detector for detecting an intensity of the whole or part of the second polarized light beam,

the method comprising the steps of;

a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer,

a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a first monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained,

b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer,

a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a second monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, and

c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal,

the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.