Method of eliminating etch ridges in a dual damascene process

• US 20060024956A1
• Filed: 07/30/2004
• Published: 02/02/2006
• Est. Priority Date: 07/30/2004
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Hong, Qi-Zhong, Zhijian, Lu
• Granted Patent: US 7,192,863 B2
• Time in Patent Office: Days
• US Class Current: 438/637
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material

Abstract

A dual damascene process employs a via fill material (38) with an etch rate that is within 60% of an etch rate that an underlying dielectric layer (34) etches for a given dielectric etch chemistry in which a trench (48) and via (50) are being formed. In one embodiment, an organic via fill material plug (40) is employed in conjunction with a bottom anti-reflective coating (BARC) material layer (42). Both the organic via fill material plug (40) and the BARC material layer (42) are selected to have a material with an etch rate that within 60% of an etch rate that an underlying dielectric layer (34) etches for a given dielectric etch chemistry in which the trench (48) and via (50) are formed.

Claims

1. A method for forming a semiconductor structure, comprising:

forming a first opening in a dielectric layer;

filling the first opening with a fill material;

etching the dielectric layer to form a second opening overlying the filled first opening with a given dielectric etch chemistry, wherein the fill material etches at an etch rate that is within 60% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

2. The method of claim 1, wherein the first opening is a via and the second opening is a trench.

3. The method of claim 1, further comprising:

etching back the fill material to form a fill material plug that resides in the first opening below a top surface of the dielectric layer; and

depositing a bottom anti-reflective coating (BARC) layer that fills the first opening above the via fill material plug and overlies at least a portion of the top surface of the dielectric layer prior to etching the second opening.

4. The method of claim 3, wherein the etching back the via fill material comprises etching the fill material with an O₂ plasma in mixture of at least one of argon (Ar) and nitrogen (N₂) gas.

5. The method of claim 3, wherein the BARC layer is formed from a material that etches at an etch rate that is within 60% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

6. The method of claim 5, wherein the BARC layer is formed from a material that etches at an etch rate that is within 20% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

7. The method of claim 5, wherein the BARC layer is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material mixed with one of die material and a polymeric material grafted with a die functional group to provide anti-reflective properties.

8. The method of claim 1, wherein the fill material is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material.

9. The method of claim 1, wherein the dielectric layer is formed from one of silicon oxide (SiO), silicon dioxide (SiO₂), silicon nitride (Si₃N₄), (SiN), silicon carbon (SiC), oxygen silicon glass (OSG), black diamond (BD-2) and silicon carbon monoxide (SiCO), and the given dielectric etch chemistry comprises an anisotropic etch with a plasma gas mixture of carbon tetrafluoride (CF₄), carbon trifluoride(CF₃), octafluorocyclobutane (C₄F₈) and oxygen (O₂).

10. The method of claim 1, wherein the fill material etches at an etch rate that is within 20% of an etch rate that the dielectric layer etches for the given etch chemistry.

11. A method for forming a dual damascene structure, comprising:

forming a via in a dielectric layer;

filling the via with an organic fill material layer;

etching back the organic via fill material to form an organic via fill material plug that resides in the via below a top surface of the dielectric layer;

depositing a bottom anti-reflective coating (BARC) layer over the dielectric layer that fills the via above the organic via fill material plug; and

anisotropically etching the dielectric layer to form a trench overlying the via with a given dielectric etch chemistry, wherein the fill material etches at an etch rate that is within 60% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

12. The method of claim 11, wherein the BARC layer is formed from a material that has an etch rate that is within 60% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

13. The method of claim 12, wherein the BARC layer is formed from a material that has an etch rate that is within 20% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry.

14. The method of claim 11, wherein the BARC layer is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material mixed with one of die material and a polymeric material grafted with a die functional group to provide anti-reflective properties.

15. The method of claim 11, wherein the fill material etches at an etch rate that is within 20% of an etch rate that the dielectric layer etches for the given etch chemistry.

16. The method of claim 11, wherein the organic via fill material is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material.

17. A method for forming a via-first dual damascene structure, comprising:

forming a via in a dielectric layer comprised of at least one of silicon oxide (SiO), silicon dioxide (SiO₂), silicon nitride (Si₃N₄), (SiN), oxygen silicon glass (OSG), black diamond (BD-2), silicon carbon (SiC) and silicon carbon monoxide (SiCO);

filling the via with an organic fill material layer;

etching back the organic via fill material to form an organic via fill material plug that resides in the via below a top surface of the dielectric layer;

depositing a bottom anti-reflective coating (BARC) layer over the dielectric layer that fills the via above the organic via fill material plug; and

etching a trench in the dielectric layer overlying the via with an etch chemistry comprising an anisotropic etch with a plasma gas mixture of carbon tetrafluoride (CF₄), carbon trifluoride (CF₃), octafluorocyclobutane (C₄F₈) and oxygen (O₂), wherein the organic fill material and the BARC layer have an etch rate that is within 60% of an etch rate that the dielectric layer etches for the given dielectric etch chemistry to provide a via-first dual damascene structure substantially free of etch ridges.

18. The method of claim 17, wherein the etching back the organic via fill material comprises etching the organic via fill material with an O₂ plasma in a mixture of at least one of argon (Ar) and nitrogen (N₂) gas.

19. The method of claim 17, wherein the BARC layer is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material mixed with one of die material and a polymeric material grafted with a die functional group to provide anti-reflective properties.

20. The method of claim 17, wherein the organic via fill material is formed from a polymeric material comprising one of a polyester material, a cellulose material, a heterocyclic material and a methacrylate material.