Process controller for semiconductor manufacturing
First Claim
1. In a production flow of low-volume, high-precision semiconductor products, a method for controlling critical dimensions of a semiconductor product during a semiconductor processing operation in the production flow, the semiconductor processing operation requiring a desired energy value to achieve the critical dimensions, the method comprising:
- measuring a previously formed critical dimension on the product;
calculating a first energy value based on the measured critical dimension and a desired critical dimension for the semiconductor processing operation; and
obtaining the desired energy value based on the calculated first energy value and a previously-obtained desired energy for the semiconductor processing operation performed on a prior product in the production flow.
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Abstract
The present disclosure relates generally to the field of semiconductor manufacturing. In one example, in a production flow of low-volume, high-precision semiconductor products, a method for controlling critical dimensions of a semiconductor product during a semiconductor processing operation in the production flow, the semiconductor processing operation requiring a desired energy value to achieve the critical dimensions includes: measuring a previously formed critical dimension on the product; calculating a first energy value based on the measured critical dimension and a desired critical dimension for the semiconductor processing operation; and obtaining the desired energy value based on the calculated first energy value and a previously-obtained desired energy for the semiconductor processing operation performed on a prior product in the production flow.
9 Citations
20 Claims
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1. In a production flow of low-volume, high-precision semiconductor products, a method for controlling critical dimensions of a semiconductor product during a semiconductor processing operation in the production flow, the semiconductor processing operation requiring a desired energy value to achieve the critical dimensions, the method comprising:
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measuring a previously formed critical dimension on the product;
calculating a first energy value based on the measured critical dimension and a desired critical dimension for the semiconductor processing operation; and
obtaining the desired energy value based on the calculated first energy value and a previously-obtained desired energy for the semiconductor processing operation performed on a prior product in the production flow. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for controlling critical dimensions of a semiconductor product during a semiconductor processing operation in a production flow, the semiconductor processing operation requiring a new correction energy value to achieve the critical dimensions, the method comprising:
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supplying a tool ratio value based on a lithography system;
obtaining an energy figure based on a first predetermined energy value for a lithography system and a second predetermined energy value for a product; and
providing a new correction energy based on a plurality of elements including the tool ratio value, the energy figure, and a desired energy value wherein the desired energy value is based on a calculated first energy value and a previously-obtained desired energy for a semiconductor processing operation performed on a prior product in a production flow. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method for controlling critical dimensions of low-volume and high-precision semiconductor products during a semiconductor processing operation in a production flow, the semiconductor processing operation requiring a new correction energy value to achieve the critical dimensions, the method comprising:
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measuring a previously formed critical dimension on a product;
obtaining a desired energy value for the product wherein the desired energy value is based on a calculated first energy value and a previously-obtained desired energy for a semiconductor processing operation performed on a prior product in a production flow;
supplying an accumulated error between a targeted critical dimension (“
CD Target”
) and mean of measured critical dimension data (“
CD Mean”
); and
calculating a new correction energy based on a plurality of elements including the desired energy figure, and a tool ratio value based on a lithography system. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification