Dosimeter having an array of sensors for measuring ionizing radiation, and dosimetry system and method using such a dosimeter

• US 20060027756A1
• Filed: 08/08/2005
• Published: 02/09/2006
• Est. Priority Date: 08/09/2004
• Status: Abandoned Application

• Current Assignee: Best Theratronics Incorporated, Thomson & Nielsen Electronics Limited
• Original Assignee: Best Theratronics Incorporated
• Inventors: Thomson, Ian, Hallil, Abdelbasset, Brown, Martin Paul
• Application Number:
  US11/198,159
• Publication Number:
  US 20060027756A1
• Time in Patent Office: Days
• US Class Current: 250/370.70
• CPC Class Codes: G01T 1/026 Semiconductor dose-rate meters

Abstract

In a dosimeter for measuring levels of ionizing radiation, for example during radiotherapy, a plurality of radiation sensors, such as insulated gate field effect transistors (IGFETs), are spaced apart at predetermined intervals on a support, for example a flexible printed circuit strip, and connected to a connector which can be coupled to a reader for reading the sensors. The sensors may each be connected to a reference device, which may also be an insulated gate field effect transistor, and the absorbed radiation dose may be determined by measuring, before and after the irradiation, the difference between the threshold voltages of the individual sensors and the threshold voltage reference device. Corresponding terminals of the sensors may be connected to the connector by a single conductor, thereby reducing the number of conductors required.

Claims

1. A dosimeter for measuring ionizing radiation comprising a plurality of Insulated Gate Field Effect Transistor (IGFET) radiation sensors spaced apart at predetermined intervals on a support and means for coupling the sensors to means for reading the sensors selectively.

2. A dosimeter according to claim 1, wherein the support comprises an elongate strip having at one end means for connecting to a reader, said plurality of radiation sensors being spaced apart along an opposite end portion of the strip and coupled to the connecting means by a plurality of conductors.

3. A dosimeter according to claim 1, wherein the support carries a two-dimensional array of said sensors.

4. A dosimeter according to claim 1, wherein the support carries a three-dimensional array of said sensors.

5. A dosimeter according to claim 1, wherein the support is flexible.

6. A dosimeter according to claim 1, wherein the radiation sensors are uniformly spaced from each other.

7. A dosimeter according to claim 1, wherein the radiation sensors are irregularly spaced from each other.

8. A dosimeter according to claim 1, wherein the radiation sensors have the same sensitivity.

9. A dosimeter according to claim 1, wherein the radiation sensors have different sensitivities.

10. A dosimeter according to claim 1, wherein each of the radiation sensors exhibits isotropic sensitivity to said radiation.

11. A dosimeter according to claim 1, wherein the IGFETs have their sources connected to the coupling means by respective ones of a plurality of conductors and their drains connected to the coupling means, in common, by a single conductor, or vice versa.

12. A dosimeter according to claim 11, wherein said IGFETs are metal oxide semiconductor field effect transistors.

13. A dosimeter according to claim 1, and a said reading means adapted to obtain readings from at least some of the plurality of radiation sensors.

14. A dosimeter according to claim 13, wherein the reading means is adapted to obtain said readings substantially simultaneously.

15. A dosimeter according to claim 1, wherein the reading means is adapted to read the sensors at predetermined intervals during an irradiation session.

16. A dosimeter according to claim 1, further comprising a reference device spaced from said plurality of radiation sensors, the spacing being such that, in use, the reference device will be spaced from the irradiation area, each of the radiation sensors being connected to the reference device.

17. A dosimeter according to claim 16, wherein the reference device is adapted to compensate for one or more of temperature, drift, zero offset and electromagnetic noise.

18. A dosimeter according to claim 16, wherein the reference device is located in said connecting means.

19. A dosimeter according to claim 13, further comprising a reference device located in said reading means, such that, in use, the reference device will be spaced from said plurality of radiation sensors and hence the irradiation area, each of the radiation sensors being connected to the reference device.

20. A dosimeter according to claim 19, wherein the reading means is adapted to compare the reference device with each of the sensors to compensate for one or more of drift, temperature changes, zero offset and electromagnetic noise.

21. A dosimeter according to claim 16, wherein the reference device comprises an insulated gate field effect transistor similar to the sensors.

22. A dosimeter according to claim 1, further comprising at least one marker identifiable by means for determining the locations of said sensors, when in use, relative to the marker and a site to be irradiated.

23. A dosimeter according to claim 22, comprising a plurality of said markers each at a predetermined spacing relative to the sensors.

24. A dosimeter according to claim 23, wherein the plurality of markers correspond in number to the sensors and are each registered to a respective one of the sensors.

26. A dosimetry system comprising a dosimeter according to claim 21, further comprising reading means coupling said dosimeter to a processor for processing said readings.

45. A dosimeter according to claim 1, wherein each sensor comprises a pair of similar semiconductor devices and the differential response of the two devices is measured to provide for one or more of temperature compensation, threshold voltage drift compensation, and offset elimination.

46. A dosimeter according to claim 45, wherein each semiconductor device comprises a field effect transistor and the offset is the difference between objective threshold voltages of the two IGFETs at zero dose.

47. A dosimeter according to claim 45, wherein the semiconductor devices are fabricated upon the same substrate.

48. A dosimeter according to claim 1, wherein each sensor comprises a floating-gate field effect transistor.

52. A dosimeter according to claim 1, wherein the radiation sensors are isotropic.

25. A dosimetry system comprising a dosimeter for measuring ionizing radiation comprising a plurality of Insulated Gate Field Effect Transistor (IGFET) radiation sensors spaced apart at predetermined intervals on a support, reading means coupled to said plurality of sensors, respectively, the reading means being adapted to obtain readings from at least some of the plurality of radiation sensors, and means coupling the reading means to a processor for processing said readings.

27. A dosimetry system according to claim 25, wherein the dosimeter is coupled via network interface means for supplying readings to a remote location.

28. A method of measuring ionizing radiation using a dosimeter having a plurality of IGFET radiation sensors spaced apart at predetermined intervals on a support and means for coupling the sensors to means for reading the sensors following irradiation thereof, the method comprising the steps of:

(i) positioning the dosimeter so that the plurality of sensors are at or adjacent a site to be irradiated;

(ii) irradiating the site so that at least some of the sensors are irradiated; and

(iii) reading the dose received by each individual sensor.

29. A method according to claim 28, using a said dosimeter in which the support comprises an elongate strip having at one end connector means for connecting to a reader, the plurality of radiation sensors being spaced apart along an opposite end portion of the strip and connected to the connector means by a plurality of conductors extending along the strip.

30. A method according to claim 28, wherein the sensors are read substantially simultaneously.

31. A method according to claim 28, wherein the sensors are read in succession.

32. A method according to claim 29, wherein the reading step is repeated at selected intervals.

49. A method according to claim 28, using a dosimeter further comprising a reference field effect transistor spaced from said plurality of IGFETs but connected thereto wherein the difference between the threshold voltages of the each IGFET and the reference field effect transistor is measured initially, the IGFETs are exposed to radiation, and then the difference between the threshold voltages is measured again.

50. A method according to claim 49, wherein, during the exposure to radiation, the gate of one transistor is forward biased while the operation of the other transistor is inhibited.

51. A method according to claim 50, wherein each sensor comprises a floating gate field effect transistor and the floating gate of each transistor is charged before irradiation, left disconnected during irradiation so that the charge is depleted by said radiation thereby reducing the threshold voltage proportionately, and the reduced threshold voltage is measured after irradiation.

33. A method of positioning an IGFET dosimeter identifiable by a predetermined imaging equipment, the method comprising the steps of:

(i) placing the dosimeter on or into a body so as to position the one or more sensors at or adjacent a site to be irradiated;

(ii) using the imaging equipment, determining the position of the dosimeter;

(iii) adjusting the dosimeter position as necessary; and

(iv) repeating steps (ii) and (iii) unless or until the dosimeter is in a desired location.

34. A method according to claim 33, for positioning a dosimeter comprising at least one marker identifiable by said imaging equipment and located at a predetermined spacing from the sensors, wherein said imaging step images said marker.

35. A method according to claim 34, for determining the location of a dosimeter having a plurality of said sensors and a plurality of said markers, each on or adjacent a respective one of the sensors, wherein the step of imaging the dosimeter images each of the markers.

36. A method according to claim 33, further comprising the prior step of providing an image of the body in the vicinity of the desired location and showing the dosimeter in the desired location, and wherein the step of adjusting the position of the dosimeter includes the step of comparing the previously provided image with the currently provided image to determine whether or not the dosimeter is in the desired location.

37. A method of testing an irradiation system using at least one IGFET dosimeter for measuring ionizing radiation and comprising a plurality of radiation sensors spaced apart at predetermined intervals on a support and means for coupling the sensors to means for reading the sensors following irradiation thereof, the method comprising the steps of:

(i) inserting the at least one dosimeter into a phantom;

(ii) irradiating the phantom; and

(iii) measuring the individual radiation doses received by the sensors.

38. A method according to claim 37, wherein the at least one dosimeter comprises an elongate strip having at one end means for connecting to a reader, the plurality of radiation sensors being spaced apart along an opposite end portion of the strip and connected to said connecting means by a plurality of conductors.

39. A method according to claim 37, wherein a plurality of said dosimeters are inserted into said phantom body to form a two-dimensional array of sensors.

40. A method according to claim 39, wherein the plurality of dosimeters are inserted into grooves or slots in a phantom in the form of a flat block.

41. A method according to claim 37, wherein the plurality of said dosimeters are inserted into said phantom to form a three-dimensional array.

42. A phantom for use in calibrating a radiation system, the phantom comprising a plurality of IGFET radiation sensors encapsulated within the phantom to form an array, and means for addressing the array for reading the sensors individually after irradiation.

43. A phantom according to claim 42, wherein the plurality of sensors form a two-dimensional array.

44. A phantom according to claim 42, wherein the plurality of sensors form a three-dimensional array.

53. A dosimeter for measuring ionizing radiation comprising a plurality of isotropic diode radiation sensors spaced apart at predetermined intervals on a support and means for coupling the sensors to means for reading the sensors.