Thin film transistor and method of fabricating the same
First Claim
1. A thin film transistor (TFT), comprising:
- a gate electrode arranged on a substrate;
a gate insulating layer arranged on the gate electrode and on exposed portions of the substrate;
an adhesive layer arranged on the gate insulating layer;
source/drain electrodes arranged on the adhesive layer, an exposed portion of the adhesive layer remaining between the source electrode and the drain electrode; and
a semiconductor layer arranged on the source/drain electrodes and on the exposed portion of the adhesive layer.
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0 Petitions
Accused Products
Abstract
An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, an adhesive layer formed on the gate insulating layer, source/drain electrodes formed on the adhesive layer, and a semiconductor layer formed on the source/drain electrodes and on the adhesive layer. The gate insulating layer and the semiconductor layer are organic, the adhesive layer providing adhesion between the source/drain electrodes and the gate insulating film while preventing gate leakage current while also improving contact resistance.
34 Citations
21 Claims
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1. A thin film transistor (TFT), comprising:
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a gate electrode arranged on a substrate;
a gate insulating layer arranged on the gate electrode and on exposed portions of the substrate;
an adhesive layer arranged on the gate insulating layer;
source/drain electrodes arranged on the adhesive layer, an exposed portion of the adhesive layer remaining between the source electrode and the drain electrode; and
a semiconductor layer arranged on the source/drain electrodes and on the exposed portion of the adhesive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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- 12. A flat panel display, comprising at least one thin film transistor (TFT) arranged on a substrate, the TFT including a gate electrode, source/drain electrodes, a semiconductor layer and an insulating layer, the insulating layer being arranged between the gate electrode and the source/drain electrodes, each of the source/drain electrodes comprise an electrode layer, the electrode layer being of a first metal, the first metal being a noble metal, the semiconductor layer being of an organic semiconductor material, the insulating layer being a metal oxide and adapted to function simultaneously as a gate insulating layer for the TFT and as an adhesive layer that increases adhesion between the source/drain electrodes and the insulating layer.
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15. A method of fabricating a TFT, comprising:
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forming a gate electrode on a substrate;
forming a gate insulating layer on the gate electrode and on exposed portions of the substrate;
forming an adhesive layer on the gate insulating layer;
forming a source electrode and a drain electrode on the adhesive layer; and
forming a semiconductor layer on the source electrode, the drain electrode and on exposed portions of the adhesive layer between the source electrode and the drain electrode. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification