Photonic crystal light emitting device with multiple lattices

• US 20060027815A1
• Filed: 08/04/2004
• Published: 02/09/2006
• Est. Priority Date: 08/04/2004
• Status: Active Grant

• Current Assignee: Agilent Technologies, Inc., Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Agilent Technologies, Inc., Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Wierer, Jonathan J. Jr., Sigalas, Mihail M.
• Granted Patent: US 7,442,964 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.

Claims

1. A device comprising:

a semiconductor stack including a light emitting layer disposed between an n-type region and a p-type region;

a photonic crystal structure formed in at least a portion of the semiconductor stack, the photonic crystal structure comprising a lattice of holes in the stack;

wherein the photonic crystal structure includes at least two different lattices.

2. The device of claim 1 wherein the light emitting layer is a III-nitride layer.

3. The device of claim 1 wherein said at least two different lattices are different lattice types.

4. The device of claim 1 wherein the at least two different lattices have different lattice constants.

5. The device of claim 1 wherein the photonic crystal structure comprises:

a first lattice of holes formed in a first region of the stack; and

a second lattice of holes formed in a second region of the stack.

6. The structure of claim 5 wherein a lattice constant of the first lattice corresponds to a local maximum in a plot of power radiated from the device vs. lattice constant.

7. The structure of claim 5 wherein a lattice constant of the second lattice corresponds to a local maximum in a plot of light extraction into a 30°

cone on a surface of the stack vs. lattice constant.

8. The structure of claim 5 wherein a lattice constant of the second lattice corresponds to a local maximum in a plot of light extraction vs. lattice constant.

9. The structure of claim 5 wherein the first and second lattices of holes are configured such that at least a portion of light generated in the first region is directed toward the second region through the semiconductor stack

10. The structure of claim 5 wherein the first and second lattices are formed on a same surface of the stack.

11. The structure of claim 5 wherein the first lattice is formed on a top surface of the stack and the second lattice is formed on a bottom surface of the stack.

12. The structure of claim 5 wherein the first region is adjacent to the second region.

13. The structure of claim 5 wherein the first region surrounds the second region.

14. The structure of claim 13 further comprising a first contact surrounding the second region.

15. The structure of claim 5 further comprising a contact, wherein the contact and the first and second lattices are configured such that the contact injects current into only one of the first and second regions.

16. The structure of claim 5 wherein the first lattice has a unit cell and the first region has a width of 5 to 20 unit cells of the first lattice.

17. The structure of claim 5 wherein the first region has a width less than about 5 microns.

18. The structure of claim 5 wherein one of the first lattice and the second lattice comprises one of a triangular, square, hexagonal, and honeycomb lattice.

19. The structure of claim 5 wherein one of the first lattice and the second lattice comprises an arrangement of holes disposed on vertices of a repeating pattern of squares and equilateral triangles.

20. The structure of claim 5 further comprising:

a third lattice of holes formed on a third region of the stack.

21. The structure of claim 20 wherein the third region surrounds the first and second regions.

22. The structure of claim 20 wherein the third lattice is configured to reflect into the semiconductor stack light emitted in one of the first region and the second region.

23. The structure of claim 20 wherein the third region is disposed between the first region and the second region and the third lattice of holes is configured to couple light from the first region to the second region.

24. The structure of claim 5 wherein dielectric material fills the holes in the first lattice of holes and the second lattice of holes, wherein the at least two different lattices have different dielectric constants filling the holes.

25. The structure of claim 5 wherein a dielectric constant of the first region is different from a dielectric constant of the second region.

26. The structure of claim 1 wherein the at least two different lattices have different hole diameters.

27. The structure of claim 1 wherein the at least two different lattices have different hole depths.

28. The structure of claim 1 further comprising a metal web overlying the stack.

29. The structure of claim 28 wherein the metal web comprises:

a plurality of major traces; and

a plurality of minor traces, wherein;

the major traces have a width of 10-20 μ

m;

the minor traces have a width of 1-5 μ

m; and

the major traces are spaced between 20 and 250 μ

m apart.