Pressure-contact type semiconductor device

• US 20060027910A1
• Filed: 10/04/2005
• Published: 02/09/2006
• Est. Priority Date: 02/12/2003
• Status: Active Grant

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Oota, Kenji, Tokunoh, Futoshi
• Granted Patent: US 7,221,047 B2
• Time in Patent Office: Days
• US Class Current: 257/688
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3185 the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 29/745 with turn-off by field effect
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H01L 2924/30105 Capacitance

Abstract

A gate electrode (1a) is formed on the outer peripheral step portion (1′) of a semiconductor substrate (1) so as to face a pressure-contact supporting block (6), and a convex contacting portion (1g) is formed on a predetermined position on the surface of the gate electrode to contact the pressure contact supporting block. The surface area of the gate electrode ranging from the inner periphery to a position adjacent to the convex contacting portion, is coated with an insulation film (1d). The convex contacting portion (1g) is formed of a convex portion integral with the gate electrode or formed of another gate electrode (1a′).

Claims

1. -6. (canceled)

7. A pressure-contact type semiconductor device having a center gate structure which includes an external cathode electrode, an external anode electrode and an external gate terminal for flowing an electric current at a time of turn on/off operation, said semiconductor device comprising:

a semiconductor substrate having a center concave step portion at a center portion thereof, said semiconductor substrate having a gate electrode and a cathode electrode formed on a top surface side of the substrate, and an anode electrode formed on a back surface of the substrate; and

a pressure-contact supporting block which is provided in an inner periphery of the external gate terminal and located on the gate electrode above the center concave portion of the substrate,

wherein the gate electrode is formed on the surface of the center concave step portion of the substrate so as to face the pressure-contact supporting block,

wherein a convex contacting portion is formed at a predetermined position of a top surface of the gate electrode so as to contact the pressure-contact supporting block, and

wherein an insulation film is formed on a surface area of the gate electrode, excluding a position of forming the convex contacting portion.

8. The pressure-contact type semiconductor device according to claim 7, wherein said gate electrode is comprised of a first gate electrode and a second gate electrode, the first gate electrode is formed on the surface of the center concave step portion of the semiconductor substrate so as to face the pressure-contact supporting block, the second gate electrode is formed as the convex contacting portion contacting the pressure-contact supporting block.

9. The pressure-contact type semiconductor device according to claim 7, wherein said convex contacting portion provided on the surface of the gate electrode is integrally formed with the gate electrode.

10. The pressure-contact type semiconductor device according to claim 7, wherein said gate electrode is comprised of a first gate electrode and a second gate electrode, the second gate electrode is formed on the surface of the center concave step portion of the semiconductor substrate so as to face the pressure-contact supporting block, and the first gate electrode is formed so as to overlay the second gate electrode, and the convex contacting portion contacting the pressure-contact supporting block is integrally formed with the first gate electrode.

11. The pressure-contact type semiconductor device according to claim 9, wherein the gate electrode covers a protrusion which is integrally protruded from the surface portion of the center concave step portion of the semiconductor substrate, and the convex contacting portion integrally formed with the gate electrode is formed to overlay the protrusion.

12. The pressure-contact type semiconductor device according to claim 7, wherein said gate electrode is comprised of a first gate electrode and a second gate electrode, the first gate electrode overlays a protrusion which is integrally protruded from the surface portion of the center concave step portion of the semiconductor substrate, and the second gate electrode is formed on the first gate electrode so as to serve as the convex contacting portion.

14. The pressure-contact type semiconductor device according to claim 7, wherein the gate electrode facing the pressure-contact supporting block is formed at an intermediate position of the semiconductor substrate.

13. (canceled)

15. -16. (canceled)