Vapor deposited functional organic coatings

• US 20060029732A1
• Filed: 08/04/2004
• Published: 02/09/2006
• Est. Priority Date: 08/04/2004
• Status: Abandoned Application

• Current Assignee: Applied Microstructures, Inc. (KLA Corporation)
• Original Assignee: Applied Microstructures, Inc. (KLA Corporation)
• Inventors: Chinn, Jeffrey D., Nowak, Romuald, Kobrin, Boris, Ashurst, William R.
• Application Number:
  US10/912,656
• Publication Number:
  US 20060029732A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: B05D 1/185 applying monomolecular layers B05D1/204 takes precedence
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/142 Pretreatment
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

We have developed an improved vapor-phase deposition method and apparatus for the application of organic films/coatings containing a variety of functional groups on substrates. Most substrates can be coated using the method of the invention. The substrate surface is halogenated using a vaporous halogen-containing compound, followed by a reaction with at least one organic molecule containing at least one nucleophilic functional group capable of reacting with a halogenated substrate surface. The halogenation of the substrate surface and the subsequent reaction with the organic molecule nucleophilic functional group are carried out in the same process chamber in a manner such that the halogenated substrate surface does not lose its functionality prior to reaction with the nucleophilic functional group(s) on the organic molecule. Typically the process chamber is operated under a pressure ranging from about 1 mTorr to about 10 Torr.

Claims

1. A method of depositing an organic coating on a substrate from a vapor phase organic-comprising precursor, wherein said substrate surface upon which said organic coating is applied is a halogenated surface which was produced by treatment of said substrate with a vaporous, halogen-containing compound in a process chamber under vacuum conditions, and wherein said organic-comprising precursor contains at least one nucleophilic functional group which reacts with said halogenated surface to attach an organic coating to said surface.

2. A method in accordance with claim 1, wherein the density of reactive halogen sites on said halogenated surface is controlled by controlling the amount of a vaporous halogen-containing compound which is contacted with said substrate surface in a process chamber under vacuum conditions.

3. A method in accordance with claim 1 or claim 2, wherein said vacuum conditions refer to a process chamber pressure ranging from about 1 mTorr to about 10 Torr.

4. A method in accordance with claim 3, wherein process chamber pressure ranges from about 10 mTorr to about 1 Torr.

5. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound contains chlorine.

6. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound is selected from the group consisting of chlorosilanes, chlorosiloxanes, fluorosilanes, fluorosiloxanes and combinations thereof.

7. A method in accordance with claim 6, wherein said halogen-containing compound is a chlorine-containing compound.

8. A method in accordance with claim 1 or claim 2, wherein water is added to said processing chamber for use in combination with said halogen-containing compound, to provide said halogenated surface.

9. A method in accordance with claim 8, wherein an amount of water added to said processing chamber is used to control the density of said the relative amount of reactive halogen-containing sites on said halogenated surface.

10. A method in accordance with claim 1, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.

11. A method in accordance with claim 8, wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes charging of a nominal amount of said halogen-containing compound and a nominal amount of said water, and reaction of said halogen containing compound and water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.

12. A method in accordance with claim 8, wherein said halogen-containing compound is SiCl₄, and wherein the ratio of water vapor partial pressure to SiCl₄ vapor pressure in a process chamber in which the substrate surface is treated is less than 1:

4.

13. A method in accordance with claim 3, wherein a total pressure in said process chamber in which said vaporous halogen-containing compound treatment is carried out is in the range of about 1 Torr to about 3 Torr.

14. A method in accordance with claim 3, wherein a temperature in said process chamber during said treatment ranges from about 25°

C. to about 100°

C.

15. A method in accordance with claim 14, wherein said temperature ranges from about 25°

C. to about 60°

C.

16. A method in accordance with claim 1 or claim 2, wherein said organic-comprising precursor is selected from the group consisting of organic compounds having the formula RNH₂ or ROH;

organic compounds including ═

NH, —

SH, —

SeH, —

TeH and —

PH₂ functional groups;

alkyl-lithium compounds, RLi;

Alkyl-Grignard reagents, RMgX; and

Gilman reagents, R_—

{2}CuLi;

wherein R is an organic radical.

17. A method in accordance with claim 1 or claim 2, wherein subsequent to halogenation of said substrate surface and prior to reaction of said halogenated substrate surface with said organic-comprising compound, said halogenated substrate surface is isolated from contact with moisture and other contaminants which affect the reaction product of said halogenated substrate surface with said organic-comprising compound.

18. A method in accordance with claim 17, wherein said isolation is achieved by carrying out said halogenation of said substrate surface and said subsequent reaction of said halogenated surface with said organic-comprising compound in the same process chamber without removing said substrate from said process chamber.

19. A method of attaching an organic coating to a surface of a substrate at a controlled density upon said substrate, wherein said organic coating is formed by reacting a vapor phase organic-comprising precursor containing at least one nucleophilic functional group with a halogen species attached to said substrate surface, and wherein said halogen species are attached to said substrate by treatment of said substrate with a vaporous, halogen-containing compound.

20. A method in accordance with claim 19, wherein said attachment is by covalent bonding.

21. A method in accordance with claim 19, wherein said density of attachment of said organic coating is controlled by a density of said halogen species attached to said substrate surface, and wherein the density of attachment of said halogen species is controlled by the amount of a vaporous halogen-containing compound which is contacted with said substrate surface in a process chamber under vacuum conditions.

22. A method in accordance with claim 19, wherein the density of attachment of said halogen species is controlled by an amount of water added either prior to or during the attachment of said halogen species.

23. A method in accordance with claim 21, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.

24. A method in accordance with claim 22 wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes charging of a nominal amount of said halogen-containing compound and a nominal amount of said water, and reaction of said halogen containing compound and water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.

25. A method in accordance with claim 24, wherein said halogen-containing compound is SiCl₄, and wherein the ratio of water vapor partial pressure to SiCl₄ vapor pressure in a process chamber in which the substrate surface is treated is less than 1:

4.