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High surface quality GaN wafer and method of fabricating same

  • US 20060029832A1
  • Filed: 08/26/2005
  • Published: 02/09/2006
  • Est. Priority Date: 06/08/2001
  • Status: Abandoned Application
First Claim
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1. A wafer comprising AlxGayInzN, wherein 0≦

  • x≦

    1, 0≦

    y≦

    1, 0≦

    z≦

    1 and x+y+z=1, said wafer having a Ga-side surface characterized by a root mean square (RMS) surface roughness of less than 1 nm in a 10×

    10 μ

    m2 area and having a pit density of about 106 to about 107 pits/cm2.

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