Thermal transition methods and devices

• US 20060030933A1
• Filed: 08/04/2005
• Published: 02/09/2006
• Est. Priority Date: 08/04/2004
• Status: Active Grant

• Current Assignee: Michael S. Kitchen, Rebecca Delegge
• Original Assignee: Michael S. Kitchen, Rebecca Delegge
• Inventors: DeLegge, Rebecca, Kitchen, Michael S.
• Granted Patent: US 7,582,109 B2
• Time in Patent Office: Days
• US Class Current: 623/1.190
• CPC Class Codes: A61B 2017/00867 shape memory effect
• CPC Class Codes: A61B 2017/1205 Introduction devices
• CPC Class Codes: A61B 2017/12054 Details concerning the detachment of the occluding device from the introduction device
• CPC Class Codes: A61B 2017/12077 Joint changing shape upon application of heat, e.g. bi-metal or reversible thermal memory
• CPC Class Codes: A61F 2/844 folded prior to deployment
• CPC Class Codes: A61F 2/86 Stents in a form characterised by the wire-like elements; Stents in the form characterised by a net-like or mesh-like structure
• CPC Class Codes: A61F 2/88 the wire-like elements formed as helical or spiral coils forming a net-like or mesh-like structure A61F2/90
• CPC Class Codes: A61F 2210/0014 using shape memory or superelastic materials, e.g. nitinol
• CPC Class Codes: A61F 2210/0033 electrically, e.g. heated by resistor
• CPC Class Codes: A61F 2210/0076 multilayered, e.g. laminated structures
• CPC Class Codes: C22F 1/006 Resulting in heat recoverable alloys with a memory effect

Abstract

A method of sequentially transitioning a thermally active shape memory device progressively translocates the thermally active shape memory device through a first controlled temperature zone and through an additional controlled temperature zone. The thermally active shape memory device is thermally transitioned and changed in geometric shape as a result of thermal communication of the shape memory device with either or both of the controlled temperature zones to produce a transitioned thermally active shape memory device. Novel devices produced according to the method are also disclosed.

Claims

1. A method of sequentially transitioning a thermally active shape memory device, comprising the steps of:

progressively translocating said thermally active shape memory device through a first controlled temperature zone;

progressively translocating said thermally active shape memory device through an additional controlled temperature zone; and

progressively thermally transitioning a geometric change in shape of said thermally active shape memory device as a result of thermal communication of said shape memory device with at least one of said first controlled temperature zone and said additional controlled temperature zone to produce a transitioned thermally active shape memory device.

2. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said transitioned thermally active shape memory device is in situ and is in position for use when said transitioned thermally active shape memory device exits said additional controlled temperature zone.

3. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein the method of claim 1 is performed in situ.

4. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein said first controlled temperature zone and said additional controlled temperature zone are maintained in thermal separation from each other, wherein no material thermal communication between said first controlled temperature zone and said additional temperature zone occurs.

5. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, said first controlled temperature zone is a relatively lower temperature zone and said additional controlled temperature zone is a relatively higher temperature zone.

6. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, said first controlled temperature zone is a relatively higher temperature zone and said additional controlled temperature zone is a relatively lower temperature zone.

7. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, wherein the method of claim 1 is performed in situ in a mammalian.

8. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the steps of:

introducing heat from a heating element to at least one of said first controlled temperature zone and said second controlled temperature zone; and

variably controlling a temperature of at least one of said first controlled temperature zone and said second controlled temperature zone by variably controlling the introduction of said heat from said heating element.

9. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the steps of introducing electrical current from an element comprising electrical contacts that transmit electrical current to said thermally active shape memory device, wherein said thermally active shape memory device has properties of electrical resistance;

increasing a temperature of said thermally active shape memory device by application of said electrical current to said thermally active shape memory device; and

thermally transitioning a geometric change in shape of said thermally active shape memory device by said application of said electrical current to produce said transitioned thermally active shape memory device.

10. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the step of introducing a chilled material into at least one of said first controlled temperature zone and said additional controlled temperature zone, wherein a temperature of said thermally active shape memory device is maintained or reduced by transfer of heat between said thermally active shape memory device and said chilled material.

11. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, further comprising the step of deploying said thermally active shape memory device by the application of mechanical force to said thermally active shape memory device and changing a geometric shape of said thermally active shape memory device.

12. A method of sequentially transitioning a thermally active shape memory device as described in claim 1, comprising the steps of:

progressively translocating a second thermally active shape memory device through said first controlled temperature zone;

progressively translocating said second thermally active shape memory device through said additional controlled temperature zone; and

thermally transitioning a geometric change in shape of said second thermally active shape memory device as a result of thermal communication of said second shape memory device with at least one of said first controlled temperature zone and said additional controlled temperature zone to produce a second transitioned thermally active shape memory device, wherein said transitioned thermally active shape memory device and said second transitioned thermally active shape memory device interact with each other.