Transparent double-injection field-effect transistor
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Abstract
A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.
25 Citations
71 Claims
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1-50. -50. (canceled)
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51. A field-effect transistor, comprising:
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a) an anode;
b) a cathode spaced apart from the anode;
c) a substantially transparent channel adapted to selectively conduct carriers between the anode and the cathode;
d) at least one substantially transparent gate electrode adapted for controlling current in the channel; and
e) at least one substantially transparent gate insulator, only one of the anode and cathode being adapted to inject carriers into the channel. - View Dependent Claims (52, 53, 54, 55)
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56-57. -57. (canceled)
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58. A method for fabricating a double-injection field-effect transistor, the method comprising the steps of:
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a) providing a substrate;
b) depositing and patterning a first conductive layer to form an anode;
c) depositing and patterning a second conductive layer to form a cathode spaced apart from the anode;
d) forming a transparent channel extending at least between the anode and cathode;
e) depositing and optionally patterning at least one transparent insulating layer to form at least one gate insulator; and
f) depositing and patterning at least one transparent conductive layer to form at least one gate electrode overlapping at least a portion of the transparent channel and at least partially aligned with the at least one gate insulator. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
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70. A method of using a substantially transparent double-injection field-effect transistor, comprising the steps of:
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a) forming an array of pixel elements for a display;
b) forming at least one substantially transparent double-injection field-effect transistor in at least partial alignment with and electrically coupled with each pixel element of the array; and
c) controlling each pixel element of the array with the at least one substantially transparent double-injection field-effect transistor corresponding to the pixel element. - View Dependent Claims (71)
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Specification